Intraspecific interactions influence size specific depth distribution in Cottus bairdi

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

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Fluorescence effects in quantitative microprobe analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134533 ◽

1990 ◽

Vol 48 (2) ◽

pp. 188-189

Author(s):

S.J.B. Reed

Keyword(s):

Microprobe Analysis ◽

Depth Distribution ◽

Exciting Radiation ◽

Primary Radiation ◽

List Type ◽

Type Number ◽

Computing Power ◽

X Ray ◽

Fluorescent Radiation

Characteristic fluorescenceThe theory of characteristic fluorescence corrections was first developed by Castaing. The same approach, with an improved expression for the relative primary x-ray intensities of the exciting and excited elements, was used by Reed, who also introduced some simplifications, which may be summarized as follows (with reference to K-K fluorescence, i.e. K radiation of element ‘B’ exciting K radiation of ‘A’):1.The exciting radiation is assumed to be monochromatic, consisting of the Kα line only (neglecting the Kβ line).2.Various parameters are lumped together in a single tabulated function J(A), which is assumed to be independent of B.3.For calculating the absorption of the emerging fluorescent radiation, the depth distribution of the primary radiation B is represented by a simple exponential.These approximations may no longer be justifiable given the much greater computing power now available. For example, the contribution of the Kβ line can easily be calculated separately.

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Ultrastructure of superficial neuromasts in the mottled sculpin, Cottus bairdi

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100156778 ◽

1989 ◽

Vol 47 ◽

pp. 958-959

Author(s):

W.R. Jones ◽

S. Coombs ◽

J. Janssen

Keyword(s):

Hair Cells ◽

Lateral Line System ◽

Electron Microscopic ◽

Line System ◽

Dense Cores ◽

Sensory Hair Cells ◽

Cytoplasmic Vesicles ◽

Cottus Bairdi ◽

Mottled Sculpin ◽

Upper Third

The lateral line system of the mottled sculpin, like that of most bony fish, has both canal (CNM) and superficial (SNM) sensory end organs, neuromasts, which are distributed on the head and trunk in discrete, readily identifiable groupings (Fig. 1). CNM and SNM differ grossly in location and in overall size and shape. The former are located in subdermal canals and are larger and asymmetric in shape, The latter are located directly on the surface of the skin and are much smaller and more symmetrical It has been suggested that the two may differ at a more fundamental level in such functionally related parameters as extent of myelination of innervating fibers and the absence of efferent innervation in SNM. The present study addresses the validity of these last two features as distinguishing criteria by examining the structure of those SNM populations indicated in Fig. 1 at both the light and electron microscopic levels.All of the populations of SNM examined conform in general to previously published descriptions, consisting of a neuroepithelium composed of sensory hair cells, support cells and mantle cells, Several significant differences from these accounts have, however, emerged. Firstly, the structural composition of the innervating fibers is heterogeneous with respect to the extent of myelination. All SNM groups, with the possible exception of the TRrs and CFLs, possess both myelinated and unmyelinated fibers within the neuroepithelium proper (Fig. 2), just as do CNM. The extent of myelina- tion is quite variable, with some fibers sheath terminating just before crossing the neuroepithelial basal lamina, some just after and a few retaining their myelination all the way to the base of the hair cells in the upper third of the neuroepithelium. Secondly, all SNMs possess fibers that may, on the basis of ultrastructural criteria, be identified as efferent. Such fibers contained numerous cytoplasmic vesicles, both clear and with dense cores. In regions where such fibers closely apposed hair cells, subsynaptic cisternae were observed in the hair cell (Fig. 3).

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A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010016491x ◽

1996 ◽

Vol 54 ◽

pp. 490-491

Author(s):

P.-F. Staub ◽

C. Bonnelle ◽

F. Vergand ◽

P. Jonnard

Keyword(s):

Electron Probe ◽

Surface Segregation ◽

Depth Distribution ◽

Computing Time ◽

Depth Resolution ◽

Physical Parameters ◽

Electron Probe Analysis ◽

Interface Phases ◽

Excitation Conditions ◽

High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

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