Epitaxial Growth of NiMnSb on GaAs by Molecular Beam Epitaxy

2005 ◽  
pp. 153-185
Author(s):  
Willem Van Roy ◽  
Marek Wójcik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy

2011 ◽  
Vol 29 (1) ◽  
pp. 01A801 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Jean-Pierre Locquet ◽  
Jin Won Seo ◽  
Christel Dieker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Kazushi Nakano ◽  
Takao Miyajima ◽  
Katsuhiro Akimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam

Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control

1989 ◽  
Vol 28 (Part 2, No. 10) ◽  
pp. L1809-L1811 ◽  
Author(s):  
Yoshimi Nakayama ◽  
Ichiro Tsukada ◽  
Atsutaka Maeda ◽  
Kunimitsu Uchinokura
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by molecular beam epitaxy

2020 ◽  
Vol 116 (12) ◽  
pp. 122102 ◽  
Author(s):  
Jiaming Li ◽  
Chenjia Tang ◽  
Peng Du ◽  
Yilan Jiang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Lattice Matched

scholarly journals Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

2013 ◽  
Vol 102 (6) ◽  
pp. 063106 ◽  
Author(s):  
Zhi-Ming Liao ◽  
Zhi-Gang Chen ◽  
Zhen-Yu Lu ◽  
Hong-Yi Xu ◽  
Ya-Nan Guo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

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