Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics

2006 ◽  
pp. 179-202
Author(s):  
Gerald Lucovsky ◽  
James C. Phillips
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Gate Stacks ◽  
Strain Relief ◽  
Rare Earth Atom ◽  
High K ◽  
Dielectric Interfaces

scholarly journals Microstructure and Electrical Properties of III-As Gate Stacks with Amorphous Rare-Earth High-k Oxides

2010 ◽  
Vol 16 (S2) ◽  
pp. 1412-1413
Author(s):  
S Oktyabrsky ◽  
R Kambhampati ◽  
V Tokranov ◽  
M Yakimov ◽  
T Heeg ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Gate Stacks ◽  
High K

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Ternary Rare Earth Transition Metal Zinc Compounds RT2Zn20 with T = Fe, Ru, Co, Rh, and Ni

1997 ◽  
Vol 52 (9) ◽  
pp. 1023-1030 ◽  
Author(s):  
Tono Nasch ◽  
Wolfgang Jeitschko ◽  
Ute Ch. Rodewald
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Hexagonal Prism ◽  
Rare Earth Atom ◽  
Zinc Compounds ◽  
A Site ◽  
Cold Pressed ◽  
Zinc Site

Forty eight new compounds RT2Zn20 were prepared by annealing cold-pressed pellets of the elemental components in an argon atmosphere. They crystallize with the cubic CeCr2Al20 type structure (Fd3̅̅m , Z = 8), which was refined from single-crystal diffractometer data of TbFeiZn20 (a = 1411.1(1) pm ), YRu2Zn20 (a = 1422.6(1) pm ), DyRu2Zn20 (a = 1422.1(1) pm), GdCo2Zn20 (a = 1406.0(1) pm ), DyRh2Zn20 (a = 1418.2(1) pm ), and TmNi2Zn20 (a= 1401.6(1) pm) to conventional residuals varying betw een R = 0.011 and R - 0.024. The com pounds have a tendency for tw inning, thus m im icking hexagonal sym metry, with the cubic [111] axis as the axis w ith the pseudohexagonal symmetry. M inor inconsistencies in the cell volum es of these com pounds indicate slight deviations from the ideal com position. N evertheless, the five atom ic sites of this structure w ere found to be fully occupied w ithin the error lim its w ith the exception of one zinc site of TmNi2Zn20. The coordination for the site of the rare earth atom s is a Frank-K asper polyhedron with coordination num ber (CN) 16. The transition metal atom s occupy a site w ith icosahedral zinc coordination (CN 12). Two of the three zinc sites are in pentagonal prism atic coordination of zinc atom s, capped by rare earth and/or transition metal atom s (CN 12), w hile the third zinc site has 12 zinc neighbors form ing a hexagonal prism , w hich is capped by tw o rare earth atom s (CN 14).

PART I: BOND STRAIN AND DEFECTS AT Si-SiO2 AND DIELECTRIC INTERFACES IN HIGH-k GATE STACKS

2006 ◽  
Vol 16 (01) ◽  
pp. 241-261 ◽  
Author(s):  
GERALD LUCOVSKY
Keyword(s):  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Dielectric Materials ◽  
Buffer Layers ◽  
Gate Stacks ◽  
High K ◽  
Interfacial Defects ◽  
Dielectric Interfaces ◽  
Bond Strain ◽  
High K Dielectric

The performance and reliability of aggressively-scaled field effect transistors that include deposited high-k dielectrics and interfacial SiO 2 buffer layers are determined in large part by electronically-active defects and defect precursors at the Si - SiO 2, and internal SiO 2-high-k dielectric interfaces. A crucial aspect of reducing interfacial defects and defect precursors is associated with bond-strain driven bonding self-organizations that take place during high temperature annealing in inert ambients. These interfacial self-organizations, and intrinsic interface defects are addressed through an extension of bond constraint theory from bulk glasses to interfaces between non-crystalline SiO 2, and i) crystalline Si , and ii) non-crystalline and crystalline alternative gate dielectric materials.

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

2004 ◽  
Vol 241 (10) ◽  
pp. 2221-2235 ◽  
Author(s):  
G. Lucovsky ◽  
J. G. Hong ◽  
C. C. Fulton ◽  
Y. Zou ◽  
R. J. Nemanich ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Spectroscopic Studies ◽  
High K
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