Low-Temperature Conduction of a Quantum Dot

2005 ◽  
pp. 97-130 ◽  
Author(s):  
M. Pustilnik ◽  
L.I. Glazman
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Temperature Conduction

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Study on Low Temperature Conduction Mechanism of Al Doped ZnO/SiO2/ P-Si Heterojunction

2021 ◽  
Vol 904 ◽  
pp. 363-368
Author(s):  
Xiao Yan Zhou ◽  
Bang Sheng Yin
Keyword(s):  
Activation Energy ◽  
Impedance Spectroscopy ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Ac Conductivity ◽  
Spray Pyrolysis Method ◽  
Temperature Conductivity ◽  
Calculated Activation Energy ◽  
Doped Zno ◽  
Temperature Conduction

The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV.

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

Low temperature conduction in GdBa2Cu3Oy(y<6.4) films

1989 ◽  
Vol 161 (4) ◽  
pp. 447-450 ◽  
Author(s):  
Y. Ochiai ◽  
F. Nakamura ◽  
K. Senoh ◽  
T. Tamura ◽  
T. Terashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Conduction
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