Studies Of Photoreflectance in Cd1−x MnxTe/Cd1−yMnyTe Superlattices

1999 ◽  
Vol 588 ◽  
Author(s):  
Chenjia Chen ◽  
Xuezhong Wang ◽  
Haitao Li ◽  
Xiaogan Liang ◽  
Guangyu Chai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Confinement ◽  
Molecular Beam ◽  
Envelope Function ◽  
Exciton Transition ◽  
Transition Energies ◽  
Gaas Substrates ◽  
Quantum Confinement Effects ◽  
Measurement Results ◽  
Good Agreement

AbstractPhotoreflectance spectroscopy has been peformed on a series of Cd1−xMnxTe/Cd1−yMnyTe superlattices. Samples were grown on (001) GaAs substrates by molecular-beam epitaxy with different barriers (x=0.3 to 0.8) and wells (y=0 to 0.01). After taking into consideration the strain-induced and quantum confinement effects, the exciton transition energies of the heavy and light holes can be determined using envelope-function calculations. The calculations are in good agreement with the photoreflectance measurement results. These results show that photoreflectance is a powerful probe for the study of quantized state structures in superlattices.

Electric field dependence of exciton transition energies in GaAs-AlxGa1−xAs quantum wells studied by photocurrent spectroscopy

1988 ◽  
Vol 38 (11) ◽  
pp. 7796-7799 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Sanders ◽  
K. R. Evans ◽  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Field Dependence ◽  
Exciton Transition ◽  
Transition Energies ◽  
Electric Field Dependence ◽  
Photocurrent Spectroscopy

GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

1988 ◽  
Vol 144 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. A. Armiento
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Low Energy ◽  
Exciton Transition ◽  
Transition Energies ◽  
Diffusion Of Vacancies ◽  
Implantation Fluence

ABSTRACTLow energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs. After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.

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