TP-C7 gallium indium arsenide 1.3-micrometer photodiodes

1979 ◽  
Vol 26 (11) ◽  
pp. 1844-1844 ◽  
Author(s):  
A.W. Mabbitt ◽  
K. Ahmad ◽  
R. Nicklin ◽  
D. Jenkins
Keyword(s):  
Indium Arsenide ◽  
Gallium Indium Arsenide

Room Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an Ft-Raman Spectrophotometer

1993 ◽  
Vol 324 ◽  
Author(s):  
J. D. Webb ◽  
D. J. Dunlavy ◽  
T. Ciszek ◽  
R. K. Ahrenkiel ◽  
M. W. Wanlass ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Room Temperature ◽  
Optical Devices ◽  
Stray Light ◽  
Gallium Indium Arsenide ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Copper Indium ◽  
Germanium Alloy ◽  
Ft Raman

AbstractThis paper demonstrates the utility of a Fourier transform (FT) Raman spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-PL spectroscopy included bulk silicon and films of copper indium diselenide (CuInSej), gallium indium arsenide (GaInAs), indium phosphide arsenide, (InPAs), and gallium arsenide-germanium alloy (GaAsGe) on various substrates. The FTIR-PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Recent innovations that improve the spectral range of the technique and eliminate instrumental spectral artifacts are described.

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