Electrical and optical characterization of Er‐implanted Si: The role of impurities and defects

1993 ◽  
Vol 74 (8) ◽  
pp. 4936-4942 ◽  
Author(s):  
F. Priolo ◽  
S. Coffa ◽  
G. Franzò ◽  
C. Spinella ◽  
A. Carnera ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Impurities And Defects

Optical Activity of Yb3+ in MeV Ion-Implanted InP.

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Uekusa ◽  
A. Majima ◽  
H. Katsumata ◽  
Y. Noyori ◽  
M. Kumagai
Keyword(s):  
Band Gap ◽  
Photon Energy ◽  
Luminescence Intensity ◽  
Annealing Temperature ◽  
Rare Earth Ions ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Efficient Energy Transfer ◽  
Transfer Processes ◽  
Impurities And Defects

ABSTRACTFor the evaluation of an implanted layer, photoluminescence (PL) and photoluminescence excitation (PLE) measurements, which are nondestructive and sensitive methods for identifying impurities and defects, were performed. Yb3+ -related sharp luminescence was observed at a wavelength of 1002nm, due to the transitions which occurred between the spin-orbit levels 2F5/2→2F7/2 of Yb3+ (4f13). Most efficient luminescence of Yb3+ was achieved at an excitation wavelength of around 880nm. The luminescence intensity of this peak (Yb3+) decreased with an increase in annealing temperature. Since the peak has not been observed for good samples in crystallinity, it may indicate that new, efficient energy transfer processes to rare-earth ions occur through the defect energy level. Especially, for the sample annealed at 600°C, Yb-related luminescence intensity excited by the photon energy below the band gap is about 3 times larger than that of excited by the photon energy above the band gap.

scholarly journals Defects and Dopants in Zinc Blende Aluminum Arsenide: A First-Principles Study

2021 ◽  
Author(s):  
Jiangming Cao ◽  
Menglin Huang ◽  
Dingrong Liu ◽  
Zenghua Cai ◽  
Yu-Ning Wu ◽  
...  
Keyword(s):  
First Principles ◽  
Aluminum Arsenide ◽  
First Principles Study ◽  
Zinc Blende

Impurities and defects in transition metals and their oxides

1986 ◽  
Vol 30 (S20) ◽  
pp. 353-366
Author(s):  
D. E. Ellis ◽  
Diana Guenzburger ◽  
M. R. Press
Keyword(s):  
Transition Metals ◽  
Impurities And Defects
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