Silver indium selenide (AgInSe2) transport properties

2005 ◽  
pp. 1-7
Author(s):  
Keyword(s):  
Transport Properties ◽  
Indium Selenide

Transport properties of silicon doped n-indium selenide

1992 ◽  
Vol 54 (5) ◽  
pp. 428-430 ◽  
Author(s):  
J. Riera ◽  
A. Segura ◽  
A. Chevy
Keyword(s):  
Transport Properties ◽  
Indium Selenide ◽  
Silicon Doped

scholarly journals The role of traps in the photocurrent generation mechanism in thin InSe photodetectors

2020 ◽  
Vol 7 (1) ◽  
pp. 252-262 ◽  
Author(s):  
Qinghua Zhao ◽  
Wei Wang ◽  
Felix Carrascoso-Plana ◽  
Wanqi Jie ◽  
Tao Wang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Indium Selenide ◽  
Generation Mechanism ◽  
Semiconducting Materials ◽  
Electrical Transport Properties ◽  
Photocurrent Generation

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials.

Transport properties of sodium intercalated indium selenide

1987 ◽  
Vol 104 (1) ◽  
pp. K41-K45 ◽  
Author(s):  
V. K. Lukyanyuk ◽  
M. V. Tovarnitskii ◽  
Z. D. Kovalyuk
Keyword(s):  
Transport Properties ◽  
Indium Selenide

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation
Sign in / Sign up

Export Citation Format

Share Document