Silver gallium selenide (AgGaSe2) impurities and defects

2005 ◽  
pp. 1-4
Author(s):  
Keyword(s):  
Gallium Selenide ◽  
Impurities And Defects

Comparative Study of Copper Indium Gallium Selenide (CIGS) Solar Cell With Other Solar Technologies

2021 ◽  
Author(s):  
Isabela C. B. ◽  
Ricardo Lameirinhas ◽  
Carlos A. F. Fernandes ◽  
João Paulo N. Torres
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Comparative Study ◽  
Crystalline Silicon ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Thin-film modules are emerging in the photovoltaic market, due to their competitive cost with the traditional crystalline silicon modules. The thin-film cells CuIn(1-x)Ga(x)Se2 (Copper Indium Gallium Selenide - CIGS) are...

Materials Optimization for thin-film copper indium gallium selenide (CIGS) solar cell based on distributed braggs reflector

Optik ◽  
2020 ◽  
pp. 165987
Author(s):  
Waqas Farooq ◽  
Thamraa Alshahrani ◽  
Syed Asfandyar Ali Kazmi ◽  
Javed Iqbal ◽  
Hassnain Abbas Khan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Temperature Dependence of Optical Energy Gap of Gallium Selenide

2001 ◽  
Vol 8 (3-4) ◽  
pp. 251-259 ◽  
Author(s):  
M. Kepinska ◽  
M. Nowak ◽  
Z. Kovalyuk ◽  
R. Murri
Keyword(s):  
Temperature Dependence ◽  
Energy Gap ◽  
Gallium Selenide ◽  
Optical Energy Gap ◽  
Optical Energy

Electrical and optical characterization of Er‐implanted Si: The role of impurities and defects

1993 ◽  
Vol 74 (8) ◽  
pp. 4936-4942 ◽  
Author(s):  
F. Priolo ◽  
S. Coffa ◽  
G. Franzò ◽  
C. Spinella ◽  
A. Carnera ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Impurities And Defects

Optical Activity of Yb3+ in MeV Ion-Implanted InP.

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Uekusa ◽  
A. Majima ◽  
H. Katsumata ◽  
Y. Noyori ◽  
M. Kumagai
Keyword(s):  
Band Gap ◽  
Photon Energy ◽  
Luminescence Intensity ◽  
Annealing Temperature ◽  
Rare Earth Ions ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Efficient Energy Transfer ◽  
Transfer Processes ◽  
Impurities And Defects

ABSTRACTFor the evaluation of an implanted layer, photoluminescence (PL) and photoluminescence excitation (PLE) measurements, which are nondestructive and sensitive methods for identifying impurities and defects, were performed. Yb3+ -related sharp luminescence was observed at a wavelength of 1002nm, due to the transitions which occurred between the spin-orbit levels 2F5/2→2F7/2 of Yb3+ (4f13). Most efficient luminescence of Yb3+ was achieved at an excitation wavelength of around 880nm. The luminescence intensity of this peak (Yb3+) decreased with an increase in annealing temperature. Since the peak has not been observed for good samples in crystallinity, it may indicate that new, efficient energy transfer processes to rare-earth ions occur through the defect energy level. Especially, for the sample annealed at 600°C, Yb-related luminescence intensity excited by the photon energy below the band gap is about 3 times larger than that of excited by the photon energy above the band gap.

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