Boron (B) carrier mobilities and drift velocities, beta-rhombohedral boron

A sign of superconductivity in Li-doped α-rhombohedral boron

10.1063/1.1420162 ◽

2001 ◽

Cited By ~ 2

Author(s):

Atsushi Oguri

Keyword(s):

Rhombohedral Boron

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Ground and Excited States of an Icosahedral B12H12Cluster Simulating the B12Cluster inβ-Rhombohedral Boron

Journal of Solid State Chemistry ◽

10.1006/jssc.1997.7423 ◽

1997 ◽

Vol 133 (1) ◽

pp. 178-181 ◽

Cited By ~ 30

Author(s):

M. Fujimori ◽

K. Kimura

Keyword(s):

Excited States ◽

Rhombohedral Boron

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Activation energies of monocrystalline beta-rhombohedral boron

Journal of Physics and Chemistry of Solids ◽

10.1016/0022-3697(64)90179-9 ◽

1964 ◽

Vol 25 (7) ◽

pp. 701-706 ◽

Cited By ~ 7

Author(s):

Robert A Brungs ◽

Vincent P Jacobsmeyer

Keyword(s):

Activation Energies ◽

Rhombohedral Boron

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Rhombohedral Boron Nitride Epitaxy on ZrB2

10.26434/chemrxiv.12859805.v1 ◽

2020 ◽

Author(s):

Laurent Souqui ◽

Justinas Palisaitis ◽

Naureen Ghafoor ◽

Henrik Pedersen ◽

Hans Högberg

Keyword(s):

Electron Microscopy ◽

Boron Nitride ◽

Photoelectron Spectroscopy ◽

Amorphous Material ◽

Limited Area ◽

Sem Images ◽

Plan View ◽

Minute Amount ◽

X Ray ◽

Rhombohedral Boron

<div>Epitaxial rhombohedral boron nitride films were deposited on ZrB<sub>2</sub>(0001)/4H-SiC(0001) by chemical vapor deposition at 1485 °C from the reaction of triethylboron and ammonia and with a minute amount of silane (SiH<sub>4</sub>). X-ray diffraction (XRD) φ-scans yield the epitaxial relationships of 𝑟−𝐵𝑁(0001)∥𝑍𝑟𝐵2(0001) out-of-plane and 𝑟−𝐵𝑁(1120)∥𝑍𝑟𝐵2(1120) in-plane. Cross-section transmission electron microscopy (TEM) micrographs showed that epitaxial break down of r-BN film occurs approximatively after 10 nm, above which epitaxial growth proceeds only in limited area up to 80 nm of film thickness. Both XRD and TEM demonstrate the formation of carbon- and nitrogen-containing cubic inclusions at the ZrB<sub>2</sub> surface. Quantitative analysis from X-ray photoelectron spectroscopy of the r-BN films shows B/N ratios between 1.30 to 1.20 and an O content of 3 to 4 at.%. Plan-view scanning electron microscopy (SEM) images reveal a surface morphology where an amorphous material comprising B, C, and N is surrounding the epitaxial twinned r-BN crystals. SiH<sub>4</sub> exposure prior to growth was found to reduce the amount of the amorphous phase on the surface. Defects such as pitting were also observed on the ZrB<sub>2</sub> template surface.</div><div><br></div>

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Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

10.26434/chemrxiv.7447397 ◽

2018 ◽

Author(s):

Laurent Souqui ◽

Henrik Pedersen ◽

Hans Högberg

Keyword(s):

Chemical Vapor Deposition ◽

Boron Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Relationship ◽

Out Of Plane ◽

Α Al2o3 ◽

Favorable Conditions ◽

Relationship Of ◽

Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

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