Seebeck coefficient of quasi-two-dimensional SnSxSe2−x crystals

1985 ◽  
Vol 63 (11) ◽  
pp. 1405-1408 ◽  
Author(s):  
Y. Frongillo ◽  
M. Aubin ◽  
S. Jandl
Keyword(s):  
Seebeck Coefficient ◽  
Single Crystals ◽  
Conduction Band ◽  
Hall Coefficient ◽  
Large Temperature ◽  
Two Dimensional ◽  
Bridgman Technique ◽  
Absolute Value ◽  
Conduction Mechanisms ◽  
Iodine Transport

We have measured the Seebeck coefficient of quasi-two-dimensional single crystals of SnSe2, SnS0.1Se1.9, and SnS0.3Se1.7, grown by the Bridgman technique, and SnSe2, grown by iodine transport, over a large temperature range varying from 15 (4.2 for SnSe2) to 300 K. To assist in the interpretation of these results, the Hall coefficient and resistivity were measured on SnSe2 and SnS0.1Se1.9 Bridgman samples. All these measurements were done in a plane perpendicular to the c axis. It was found that, as the temperature decreases, the absolute value of the Seebeck coefficient decreases slightly before a surprisingly large increase at the lowest temperatures. We interpret these results as the manifestation of two conduction mechanisms: electrons in the conduction band and hopping of electrons between impurities.

P-Type Transparent Conductivity of Cu1-xAlS2 (x = 0 ~ 0.08)

2008 ◽  
Vol 368-372 ◽  
pp. 666-668 ◽  
Author(s):  
Min Ling Liu ◽  
Fu Qiang Huang ◽  
Li Dong Chen
Keyword(s):  
Optical Properties ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

A series of Cu1-xAlS2 (x = 0 ~ 0.08) bulk samples were synthesized by spark plasma sintering. The electrical and optical properties were investigated. P-type conductions for all samples were confirmed by both positive Seebeck coefficient and Hall coefficient. Bulk undoped CuAlS2 had a high conductivity of about 0.9 S/cm with a large band gap of 3.4 eV at room temperature. For vacancy-doped in Cu site, the carrier concentration was highly enhanced, reaching 1.7 × 1019 cm-3 for 8 mol% doped sample, and without decreasing the bang gap. The introduction of vacancies destroys the continuity of Cu-S network, which decreases the Hall mobility.

Thermoelectric and Transport Properties of In-Filled CoSb3 Skutterudites

2010 ◽  
Vol 658 ◽  
pp. 17-20 ◽  
Author(s):  
Jae Yong Jung ◽  
Kwan Ho Park ◽  
Soon Chul Ur ◽  
Il Ho Kim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Hall Coefficient ◽  
Lattice Contribution ◽  
Type Conductivity ◽  
Semiconducting Material

In-filled CoSb3 skutterudites (InzCo4Sb12) were prepared and the filling effects on the thermoelectric and transport properties were examined. Seebeck coefficient and Hall coefficient confirmed that all the samples showed n-type conductivity. Temperature dependence of the electrical resistivity suggested that InzCo4Sb12 is a highly degenerate semiconducting material. The thermal conductivity was considerably reduced by In filling and the lattice contribution was dominant.

Enhanced Thermoelectric Properties of FeSbx Nanocomposites Through Stoichiometric Adjustment

2012 ◽  
Vol 1456 ◽  
Author(s):  
Mani Pokharel ◽  
Huaizhou Zhao ◽  
Kevin Lukas ◽  
Zhifeng Ren ◽  
Cyril Opeil
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Hall Coefficient

ABSTRACTThe Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient of FeSbx (x = 2.04, 2.00, and 1.96) nanocomposites hot pressed at 300 °C were measured. The power factor of FeSb1.96 was increased by 105% compared to FeSb2. Hall coefficient measurements revealed a decreased carrier concentration and increased mobility in FeSb1.96 with an overall enhancement in ZTof 45% in FeSb1.96 .

ON THE IN-PLANE SEEBECK COEFFICIENT IN YBa2Cu3O7-δ

2000 ◽  
Vol 14 (21) ◽  
pp. 2223-2230
Author(s):  
F. FUJITA ◽  
H. C. HO ◽  
D. L. MORABITO
Keyword(s):  
Seebeck Coefficient ◽  
Single Crystal ◽  
Thermal Diffusion ◽  
Hall Coefficient ◽  
Minority Carriers

The measured in-plane Seebeck coefficient Sab in single-crystal YBa 2 Cu 3 O 7-δ is negative and temperature (T)-independent. This behavior is shown to arise from the thermal diffusion of "electrons", which are the minority carriers in the ab-plane conduction. The majority carriers in the plane are "holes", judged from the measured positive Hall coefficient [Formula: see text].

High Positive Seebeck Coefficient of Aqueous I–/I3– Thermocells Based on Host–Guest Interactions and LCST Behavior of PEGylated α-Cyclodextrin

2021 ◽  
Author(s):  
Yimin Liang ◽  
Joseph Ka-Ho Hui ◽  
Masa-aki Morikawa ◽  
Hirotaka Inoue ◽  
Teppei Yamada ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Lcst Behavior

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

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