Zinc selenide (ZnSe) shallow acceptor ionization energies

2005 ◽  
pp. 1-5
Author(s):  
Keyword(s):  
Zinc Selenide ◽  
Shallow Acceptor ◽  
Ionization Energies

"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE

2016 ◽  
Vol 75 (3) ◽  
pp. 279-284 ◽  
Author(s):  
V. P. Makhniy ◽  
O. V. Kinzersky ◽  
I. M. Senko
Keyword(s):  
Zinc Selenide ◽  
Vapor Phase

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

2005 ◽  
Vol 108-109 ◽  
pp. 181-186 ◽  
Author(s):  
Valentin V. Emtsev ◽  
Boris A. Andreev ◽  
Gagik A. Oganesyan ◽  
D.I. Kryzhkov ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Compressive Stress ◽  
Reference Temperature ◽  
Enhancement Effect ◽  
Shallow Acceptor ◽  
Thermal Donor ◽  
Compressive Stresses ◽  
Heat Treated ◽  
Donor Formation ◽  
New Donors

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.

scholarly journals Evidence for oxygen being a dominant shallow acceptor in p-type CuI

APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 051101
Author(s):  
P. Storm ◽  
S. Gierth ◽  
S. Selle ◽  
M. S. Bar ◽  
H. von Wenckstern ◽  
...  
Keyword(s):  
Shallow Acceptor ◽  
P Type

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

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