Gallium arsenide (GaAs) sound velocities, ultrasonic attenuation, phonon viscosity

2005 ◽  
pp. 1-6
Author(s):  
Keyword(s):  
Gallium Arsenide ◽  
Ultrasonic Attenuation ◽  
Sound Velocities

Some ultrasonic attenuation measurements on indium antimonide and gallium arsenide

1970 ◽  
Vol 315 (1522) ◽  
pp. 369-379 ◽  
Keyword(s):  
Gallium Arsenide ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Indium Antimonide ◽  
Ultrasonic Attenuation ◽  
The Individual

Measurements have been made of the temperature dependence at 1 GHz of the ultrasonic attenuation of various modes in single crystals of n -type indium antimonide and gallium arsenide. The observed attenuation has been compared with predictions based on the work of Simons and Maris which takes into account the finite lifetime of the thermal phonons with which the ultrasonic phonons interact. The agreement obtained is in general acceptable, considering that in the treatment given, there are no adjustable parameters. Further experiments are suggested to identify the individual processes which are responsible for the attenuation. It is suggested that information concerning the lifetime of specific thermal modes may soon be available from such attenuation measurements.

Elastic Properties and Microstructure of Metallic Glasses Pd39Ni10Cu30P21 Studied by Microacoustical Technique

2002 ◽  
Vol 754 ◽  
Author(s):  
Vadim M. Levin ◽  
Julia S. Petronyuk ◽  
Limin Wang ◽  
Jiankai Hu ◽  
Qianlin Zhang
Keyword(s):  
Elastic Properties ◽  
Ultrasonic Attenuation ◽  
Glassy State ◽  
Low Frequency ◽  
Supercooled Liquid ◽  
Coarse Grained ◽  
Acoustic Images ◽  
Standard Pulse ◽  
Crystallization Onset ◽  
Sound Velocities

ABSTRACTThe elastic properties of Pd39Ni10Cu10P21 bulk metallic glass (BMG) have been analysed using measurements of sound velocities. Different states of the Pd39Ni10Cu10P21 system (glassy state, supercooled liquid (SCL) and polycrystalline state) were obtained by annealing the samples near the glass transition and crystallization onset temperature. The microacoustical technique has been applied to measure local values of longitudinal and transverse elastic wave velocities and their distribution over a specimen. Finally sound velocities VL and VT, density ρ, bulk K and shear G elastic moduli were measured for different states. The values of ρ, VL and K decrease as temperature increases and the transition from glass to SCL takes place. In the crystalline state ultrasonic measurements were performed by the standard pulse ultrasonic technique with low-frequency flat transducer because of high ultrasonic attenuation in this state. Acoustic images (C-scans) demonstrate coarse-grained microstructure in this state. This is assumed to be characteristic of the microstructure obtained by crystallizing BMG.

ULTRASONIC ATTENUATION DUE TO ZENER RELAXATION IN SINGLE-CRYSTAL PALLADIUM HYDRIDE

1983 ◽  
Vol 44 (C9) ◽  
pp. C9-419-C9-424
Author(s):  
R. G. Leisure ◽  
T. Kanashiro ◽  
P. C. Riedi ◽  
D. K. Hsu
Keyword(s):  
Single Crystal ◽  
Ultrasonic Attenuation ◽  
Palladium Hydride

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis

2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria
Keyword(s):  
Gallium Arsenide ◽  
Sulfuric Acid ◽  
Nitric Acid ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Mixed Acid ◽  
Optimum Parameters ◽  
Plastic Package ◽  
Fuming Nitric Acid ◽  
Concentrated Sulfuric Acid

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

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