Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

B.R. Tuttle; K. Hess; L.F. Register

doi:10.1006/spmi.2000.0859

Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

Superlattices and Microstructures ◽

10.1006/spmi.2000.0859 ◽

2000 ◽

Vol 27 (5-6) ◽

pp. 441-445 ◽

Cited By ~ 2

Author(s):

B.R. Tuttle ◽

K. Hess ◽

L.F. Register

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Defect Creation ◽

Related Defect

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Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors

Superlattices and Microstructures ◽

10.1006/spmi.1999.0804 ◽

2000 ◽

Vol 27 (2-3) ◽

pp. 229-233 ◽

Cited By ~ 9

Author(s):

Blair R. Tuttle ◽

William McMahon ◽

Karl Hess

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Defect Creation

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1890445 ◽

2005 ◽

Vol 97 (10) ◽

pp. 104501

Author(s):

M. P. Temple ◽

D. W. Dyke ◽

P. A. Childs

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Hot Electron Injection

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On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1389318 ◽

2001 ◽

Vol 79 (6) ◽

pp. 863-865 ◽

Cited By ~ 4

Author(s):

Kangguo Cheng ◽

Jean-Pierre Leburton ◽

Karl Hess ◽

Joseph W. Lyding

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Electron ◽

Carrier Injection

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Direct observation of channel hot-electron energy in short-channel metal-oxide-semiconductor field-effect transistors

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667466 ◽

2010 ◽

Author(s):

Gang Zhang ◽

Cheng Yang ◽

Hua-Min Li ◽

Tian-zi Shen ◽

Won Jong Yoo

Keyword(s):

Metal Oxide ◽

Electron Energy ◽

Direct Observation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Short Channel

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Direct observation of hot-electron energy distribution in silicon metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.124613 ◽

1999 ◽

Vol 75 (8) ◽

pp. 1113-1115 ◽

Cited By ~ 7

Author(s):

T. Sakamoto ◽

H. Kawaura ◽

T. Baba ◽

T. Iizuka

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Electron Energy ◽

Direct Observation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Electron Energy Distribution

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Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption

Applied Physics Letters ◽

10.1063/1.125259 ◽

1999 ◽

Vol 75 (20) ◽

pp. 3147-3149 ◽

Cited By ~ 38

Author(s):

K. Hess ◽

B. Tuttle ◽

F. Register ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Threshold Energy ◽

Hydrogen Desorption ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron

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Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126845 ◽

2000 ◽

Vol 76 (26) ◽

pp. 3992-3994 ◽

Cited By ~ 40

Author(s):

Ken Uchida ◽

Kazuya Matsuzawa ◽

Junji Koga ◽

Shin-ichi Takagi ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Rate ◽

Hot Electron ◽

Electron Generation

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Characteristic length of hot-electron transport in silicon metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126427 ◽

2000 ◽

Vol 76 (18) ◽

pp. 2618-2620 ◽

Cited By ~ 6

Author(s):

T. Sakamoto ◽

H. Kawaura ◽

T. Baba ◽

T. Iizuka

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Field Effect ◽

Characteristic Length ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Hot Electron Transport

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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