Vanishing of the Mott transition in semiconductor nanocrystals

1998 ◽  
Vol 23 (2) ◽  
pp. 401-406 ◽  
Author(s):  
G. Tamulaitis ◽  
S. Jur s̆ ◽  
G. Kuril c̆ ◽  
A. Z̆
Keyword(s):  
Semiconductor Nanocrystals ◽  
Mott Transition

Auger recombination as a probe of the Mott transition in semiconductor nanocrystals

2000 ◽  
Vol 76 (20) ◽  
pp. 2850-2852 ◽  
Author(s):  
P. Němec ◽  
P. Malý ◽  
M. Nikl ◽  
K. Nitsch
Keyword(s):  
Auger Recombination ◽  
Semiconductor Nanocrystals ◽  
Mott Transition

Spins in Semiconductor Nanocrystals

Priroda ◽  
2018 ◽  
pp. 22-31
Author(s):  
A. Rodina ◽  
◽  
D. Yakovlev ◽  
Keyword(s):  
Semiconductor Nanocrystals

scholarly journals Interacting stochastic topology and Mott transition from light response

2021 ◽  
Vol 103 (3) ◽  
Author(s):  
Philipp W. Klein ◽  
Adolfo G. Grushin ◽  
Karyn Le Hur
Keyword(s):  
Light Response ◽  
Mott Transition

scholarly journals Dynamic lattice distortions driven by surface trapping in semiconductor nanocrystals

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Burak Guzelturk ◽  
Benjamin L. Cotts ◽  
Dipti Jasrasaria ◽  
John P. Philbin ◽  
David A. Hanifi ◽  
...  
Keyword(s):  
Photon Energy ◽  
Semiconductor Nanocrystals ◽  
Atomic Scale ◽  
Atomistic Simulations ◽  
Shell System ◽  
Structural Distortions ◽  
Colloidal Semiconductor Nanocrystals ◽  
Femtosecond Electron Diffraction ◽  
Structural Deformations ◽  
Nonradiative Processes

AbstractNonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in such materials are not understood. Here, femtosecond electron diffraction measurements corroborated by atomistic simulations uncover transient lattice deformations accompanying radiationless electronic processes in colloidal semiconductor nanocrystals. Investigation of the excitation energy dependence in a core/shell system shows that hot carriers created by a photon energy considerably larger than the bandgap induce structural distortions at nanocrystal surfaces on few picosecond timescales associated with the localization of trapped holes. On the other hand, carriers created by a photon energy close to the bandgap of the core in the same system result in transient lattice heating that occurs on a much longer 200 picosecond timescale, dominated by an Auger heating mechanism. Elucidation of the structural deformations associated with the surface trapping of hot holes provides atomic-scale insights into the mechanisms deteriorating optoelectronic performance and a pathway towards minimizing these losses in nanocrystal devices.

scholarly journals Understanding Discrete Growth in Semiconductor Nanocrystals: Nanoplatelets and Magic-Sized Clusters

2021 ◽  
Vol 54 (7) ◽  
pp. 1545-1554
Author(s):  
Andrew B. Pun ◽  
Sergio Mazzotti ◽  
Aniket S. Mule ◽  
David J. Norris
Keyword(s):  
Semiconductor Nanocrystals
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