Subcell Structure and Two Different Superstructures of the Rare Earth Metal Silicide Carbides Y3Si2C2, Pr3Si2C2, Tb3Si2C2, and Dy3Si2C2

2001 ◽  
Vol 156 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Wolfgang Jeitschko ◽  
Martin H. Gerdes ◽  
Anne M. Witte ◽  
Ute Ch. Rodewald
2007 ◽  
Vol 21 (11) ◽  
pp. 1799-1815 ◽  
Author(s):  
TAO DING ◽  
JUNQIANG SONG ◽  
QUN CAI

Many rare-earth metals can react with Si atoms to form rare-earth metal silicides, which have a high conductivity and a low Schottky barrier on the n-type Si substrate. The investigations of the rare-earth metal silicide nanostructures self-assembled on the Si (001) surface are reviewed in this paper. The growth behaviors of Er silicide nanostructures are studied as the functions of annealing temperature, annealing time and Er coverage. The crystalline structures of the nanowires and nanoislands, the influence of substrate surface on the formation of nanostructures, and the shape transitions occuring during growth are analyzed comprehensively, which make contributions to the silicide nanostructure growth with the controlled structures and size-distributions. Furthermore, recent study progresses have been reported for the electrical and electronic properties of the rare-earth metal silicide nanowires.


ChemInform ◽  
2016 ◽  
Vol 47 (45) ◽  
Author(s):  
Danuta Dutczak ◽  
Markus Stroebele ◽  
David Enseling ◽  
Thomas Juestel ◽  
H.-Juergen Meyer

2017 ◽  
Vol 46 (28) ◽  
pp. 9253-9265 ◽  
Author(s):  
Jiliang Zhang ◽  
Yanyan Liu ◽  
Chan Hung Shek ◽  
Yingmin Wang ◽  
Svilen Bobev

This paper discusses the germanides with the general formula REAl1−xGe3(RE = Nd, Sm, Gd–Ho), whose average structure is a defect-variant of the orthorhombic SmNiGe3.


2016 ◽  
Vol 2016 (25) ◽  
pp. 4011-4016 ◽  
Author(s):  
Danuta Dutczak ◽  
Markus Ströbele ◽  
David Enseling ◽  
Thomas Jüstel ◽  
H.-Jürgen Meyer

Sign in / Sign up

Export Citation Format

Share Document