Excess enthalpies of (heptane + ethyl 1,1-dimethylethyl ether + ethanol) at the temperatures 298.15 K and 313.15 K and atmospheric pressure

1995 ◽  
Vol 27 (9) ◽  
pp. 1017-1023 ◽  
Author(s):  
Marı́a C. Martı́n ◽  
Miguel A. villamañán ◽  
Rüdiger N. lichtenthaler
Keyword(s):  
Atmospheric Pressure ◽  
Excess Enthalpies

Measurements and analysis of the excess enthalpies of some dichloroalkane + 2-ketone systems using UNIFAC group-contribution model

1994 ◽  
Vol 72 (2) ◽  
pp. 304-307 ◽  
Author(s):  
Consolación P. Menaut ◽  
José M. Pico ◽  
Josefa Fernández ◽  
José L. Legido ◽  
M. Inmaculada Paz Andrade
Keyword(s):  
Binary Mixtures ◽  
Proximity Effect ◽  
Atmospheric Pressure ◽  
Group Contribution ◽  
Experimental Results ◽  
Excess Enthalpies ◽  
Calvet Microcalorimeter ◽  
Group Contribution Model ◽  
Normal Atmospheric Pressure ◽  
Unifac Group Contribution Model

Experimental excess molar enthalpies hE at 298.15 K and normal atmospheric pressure were obtained for the binary mixtures 1,2-dichloropropane + (2-propanone, 2-butanone, or 2-pentanone), 1,3-dichloropropane + (2-butanone or 2-pentanone), 1,4-dichlorobutane + (2-butanone or 2-pentanone) using a Calvet microcalorimeter. The hE values for all the mixtures were negative. The experimental results used to test the capability of the interaction parameters of two versions of the UNIFAC group-contribution model to predict the proximity effect in these kind of mixtures.

Excess properties of mixtures of some n-alkoxyethanols with organic solvents. V. Excess enthalpies of 2-butoxyethanol with normal alkanes at 298.15 K

1988 ◽  
Vol 66 (10) ◽  
pp. 2618-2620 ◽  
Author(s):  
Jose Carlos Cobos ◽  
Isaias Garcia ◽  
Carlos Casanova
Keyword(s):  
Chain Length ◽  
Organic Solvents ◽  
Mole Fraction ◽  
Atmospheric Pressure ◽  
Molar Enthalpy ◽  
Excess Properties ◽  
Excess Enthalpies ◽  
Excess Molar Enthalpy ◽  
Normal Alkanes

The excess molar enthalpy HE has been determined as a function of mole fraction x at 298.15 K and atmospheric pressure for five (2-butoxyethanol + n-alkane) mixtures. The n-alkanes were n-heptane, n-octane, n-decane, n-dodecane, and n-tetradecane. The mixtures show positive and unsymmetrical HE, skewed towards low mole fractions of 2-butoxyethanol, and whose value increases with the chain length n of the alkane.

A High-Voltage Terminal for a Field-Emission Gun

1972 ◽  
Vol 30 ◽  
pp. 428-429
Author(s):  
N. F. Ziegler
Keyword(s):  
Field Emission ◽  
High Voltage ◽  
Atmospheric Pressure ◽  
Power Supplies ◽  
High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Microstructure and reactivity of small metal particles: The role of Ce additives

1992 ◽  
Vol 50 (1) ◽  
pp. 318-319
Author(s):  
L.D. Schmidt ◽  
K. R. Krause ◽  
J. M. Schwartz ◽  
X. Chu
Keyword(s):  
Atmospheric Pressure ◽  
Noble Metals ◽  
Mixed Oxides ◽  
Catalytic Properties ◽  
Chemical Shifts ◽  
Catalytic Converter ◽  
Structural Evolution ◽  
Single Particles ◽  
Small Metal Particles

The evolution of microstructures of 10- to 100-Å diameter particles of Rh and Pt on SiO2 and Al2O3 following treatment in reducing, oxidizing, and reacting conditions have been characterized by TEM. We are able to transfer particles repeatedly between microscope and a reactor furnace so that the structural evolution of single particles can be examined following treatments in gases at atmospheric pressure. We are especially interested in the role of Ce additives on noble metals such as Pt and Rh. These systems are crucial in the automotive catalytic converter, and rare earths can significantly modify catalytic properties in many reactions. In particular, we are concerned with the oxidation state of Ce and its role in formation of mixed oxides with metals or with the support. For this we employ EELS in TEM, a technique uniquely suited to detect chemical shifts with ∼30Å resolution.

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