Structural Effects on the Electronic Properties of TlCu7-δS4Investigated by Diffraction-Resistance Measurements

2012 ◽  
Vol 638 (15) ◽  
pp. 2565-2570 ◽  
Author(s):  
T. Erinc Engin ◽  
Steve Hull ◽  
Anthony V. Powell
Keyword(s):  
Electronic Properties ◽  
Structural Effects

Structural Effects on the Electronic Properties of Extended Fused-Ring Thieno[3,4-b]pyrazine Analogues

2011 ◽  
Vol 76 (15) ◽  
pp. 6383-6388 ◽  
Author(s):  
Jon P. Nietfeld ◽  
Ryan L. Schwiderski ◽  
Thomas P. Gonnella ◽  
Seth C. Rasmussen
Keyword(s):  
Electronic Properties ◽  
Structural Effects ◽  
Fused Ring

Synthesis of homo- and heterocyclic silanes via intermediates with Si=Si bonds

2010 ◽  
Vol 82 (3) ◽  
pp. 595-602 ◽  
Author(s):  
Kai Abersfelder ◽  
David Scheschkewitz
Keyword(s):  
Electronic Properties ◽  
Epitaxial Growth ◽  
Functional Group ◽  
Structural Effects ◽  
Elemental Silicon ◽  
Silicon Clusters ◽  
Residual Functional

An account is given of our efforts in the synthesis of homo- and heterocyclic silanes via occasionally stable unsymmetrically substituted disilene intermediates of the A2Si=Si(A)B type that are accessible from a disila analog of a vinyl lithium. This approach is particularly powerful in the preparation of three-membered rings such as cyclotrisilanes with a residual functionality that can be either electro- or nucleophilic in nature and can even give rise to ring-expanded products with preserved Si=Si moiety. The intermediacy of transient silylenes in some of these transformations is discussed as well as the structural effects of the electronic properties of the residual functional group. The relevance of these studies for the understanding of Si(100) surface annealed species during the epitaxial growth of elemental silicon is pointed out, and the potential of the methodology for the synthesis of unusual polycyclic silicon clusters is noted.

Structural effects on the electronic properties of (BEDT-TTF)2BF4TCE0.5

1997 ◽  
Vol 86 (1-3) ◽  
pp. 1971-1972 ◽  
Author(s):  
Toshiaki Enoki ◽  
Isao Ichikawa ◽  
Akira Miyazaki ◽  
Gunzi Saito
Keyword(s):  
Electronic Properties ◽  
Structural Effects

ChemInform Abstract: Structural Effects on the Electronic Properties of Extended Fused-Ring Thieno[3,4-b]pyrazine Analogues.

ChemInform ◽  
2011 ◽  
Vol 42 (49) ◽  
pp. no-no
Author(s):  
Jon P. Nietfeld ◽  
Ryan L. Schwiderski ◽  
Thomas P. Gonnella ◽  
Seth C. Rasmussen
Keyword(s):  
Electronic Properties ◽  
Structural Effects ◽  
Fused Ring

the effects of resonance with Jupiter in the system of short-period comets

1974 ◽  
Vol 22 ◽  
pp. 193-203
Author(s):  
L̆ubor Kresák
Keyword(s):  
Structural Effects ◽  
Order Resonance ◽  
Mean Motion ◽  
Short Period ◽  
The Mean ◽  
Compound Effect ◽  
Low Order

AbstractStructural effects of the resonance with the mean motion of Jupiter on the system of short-period comets are discussed. The distribution of mean motions, determined from sets of consecutive perihelion passages of all known periodic comets, reveals a number of gaps associated with low-order resonance; most pronounced are those corresponding to the simplest commensurabilities of 5/2, 2/1, 5/3, 3/2, 1/1 and 1/2. The formation of the gaps is explained by a compound effect of five possible types of behaviour of the comets set into an approximate resonance, ranging from quick passages through the gap to temporary librations avoiding closer approaches to Jupiter. In addition to the comets of almost asteroidal appearance, librating with small amplitudes around the lower resonance ratios (Marsden, 1970b), there is an interesting group of faint diffuse comets librating in characteristic periods of about 200 years, with large amplitudes of about±8% in μ and almost±180° in σ, around the 2/1 resonance gap. This transient type of motion appears to be nearly as frequent as a circulating motion with period of revolution of less than one half that of Jupiter. The temporary members of this group are characteristic not only by their appearance but also by rather peculiar discovery conditions.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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