Heavy ion induced Ti X-ray satellite structure for Ti, TiN, and TiO2 thin films

2018 ◽  
Vol 47 (6) ◽  
pp. 475-483 ◽  
Author(s):  
Marko Käyhkö ◽  
Mikko R. J. Palosaari ◽  
Mikko Laitinen ◽  
Kai Arstila ◽  
Ilari J. Maasilta ◽  
...  
2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.


Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.


2011 ◽  
Vol 98 (19) ◽  
pp. 192512 ◽  
Author(s):  
Hardeep Thakur ◽  
P. Thakur ◽  
Ravi Kumar ◽  
N. B. Brookes ◽  
K. K. Sharma ◽  
...  

2007 ◽  
Vol 1043 ◽  
Author(s):  
Hirotaka Ohno ◽  
Daiju Matsumura ◽  
Yasuo Nishihata ◽  
Jun'ichiro Mizuki ◽  
Norito Ishikawa ◽  
...  

AbstractCeO2 thin films were irradiated with 200MeV Xe ions. Effects of the irradiation were studied by using Extended X-ray Absorption Fine Structure (EXAFS) measurement at SPring8 synchrotron radiation facility. EXAFS spectra for the irradiated thin films near the Ce K-edge show that the coordination number for oxygen atoms around Ce atom decreases and that the Ce-O Debye-Waller factor increases by the irradiation. The atomic distance between oxygen atom and Ce atom does not vary within the accuracy of EXAFS measurement. The effect of high density electronic excitation on the structure of CeO2 is discussed.


ChemPhysChem ◽  
2010 ◽  
Vol 11 (10) ◽  
pp. 2205-2208 ◽  
Author(s):  
Lola González-García ◽  
Angel Barranco ◽  
Adela Muñoz Páez ◽  
Agustín R. González-Elipe ◽  
Mari-Cruz García-Gutiérrez ◽  
...  

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