scholarly journals VP35.08: Why I need local fetal biometry and growth chart: comparison of available international biometry and growth parameters to Indian biometry charts

2021 ◽  
Vol 58 (S1) ◽  
pp. 89-312
Author(s):  
P. Acharya ◽  
A. Acharya ◽  
F. Acharya ◽  
R. Sutaria
Keyword(s):  
Growth Parameters ◽  
Growth Chart ◽  
Fetal Biometry

Babies Who Are Small for Gestational Age

1995 ◽  
Vol 16 (9) ◽  
pp. 354-354
Author(s):  
Barbara K. Russell
Keyword(s):  
Gestational Age ◽  
Small For Gestational Age ◽  
Intrauterine Growth Retardation ◽  
Growth Parameters ◽  
Mortality Rates ◽  
Heterogeneous Population ◽  
Growth Chart ◽  
Intrauterine Growth ◽  
Increased Risk ◽  
Definition Of

Small for gestational age (SGA) is a term applied to a heterogeneous population of babies who do not meet the expected growth parameters for their gestational age. The definition of SGA is variable, but the clinical definition used most often is any baby who weighs less than 2500 g and falls below the 10th percentile on the growth chart for its gestational age. These infants are at increased risk for hypoglycemia, polycythemia, and temperature instability and suffer higher neonatal mortality rates. Although they often are used interchangeably, the terms SGA and intrauterine growth retardation (IUGR) are not always synonymous. Approximately 60% of infants classified as SGA are constitutionally small babies who are small for gestational age but not growth retarded.

Evaluation of Applicability of Standard Growth Curves to Indian Women by Fetal Biometry

2009 ◽  
Vol 1 (3) ◽  
pp. 55-61 ◽  
Author(s):  
Ashini Acharya ◽  
Prashant Acharya
Keyword(s):  
Fetal Growth ◽  
Indian Population ◽  
Growth Parameters ◽  
Growth Curves ◽  
Abdominal Circumference ◽  
Correct Prediction ◽  
Indian Women ◽  
Fetal Biometry ◽  
Intrauterine Growth ◽  
Biparietal Diameter

ABSTRACT Objective To verify the applicability of standard fetal growth curves proposed for western populations to an Indian population. Method Thirty patients were included and ultrasound scans were performed on Indian pregnant women to measure fetal growth parameters of biparietal diameter, head circumference, abdominal circumference and femur length for every weekly interval from 14 to 40 weeks. Twenty-five hundred women had ultrasonic measurements of fetal BPD, HC, AC and FL between 12 to 42 weeks of pregnancy were also included in study for confirming the growth parameters and plotting of Growth curves. The data were compared with the commonly recommended standards of Hadlock, Campbell, Jeanty and Chitty. Results First and second trimester biometry findings are comparable to western charts but none of the standard charts agreed with the data in the present study particularly in third trimester. Conclusion Since most parameters of the standard growth curves developed in the west are not applicable for assessing the intrauterine growth of Indian babies we have developed growth curves for the Indian population to prevent over-diagnosis of intrauterine growth retardation and correct prediction of fetal age in Indian population.

scholarly journals Clinician Perceptions of Pediatric Growth Chart Use and Electronic Health Records in Kentucky

2012 ◽  
Vol 03 (04) ◽  
pp. 437-447 ◽  
Author(s):  
K. Vyas ◽  
B. Perry ◽  
N. Soares
Keyword(s):  
Electronic Health Records ◽  
Parent Education ◽  
Online Survey ◽  
Growth Parameters ◽  
Pediatric Care ◽  
Growth Chart ◽  
Growth Charts ◽  
Health Records ◽  
Family Practitioners ◽  
Electronic Health

SummaryBackground: Growth chart recording is a key component of pediatric care. EHR systems could provide several growth charting functionalities compared to paper methods. To our knowledge, there has been no U.S. study exploring clinicians’ perceptions and practices related to recording of growth parameters as they adapt to electronic methods.Objectives: To explore clinician practices regarding recording growth parameters as they adapt to electronic health records (EHR) and to investigate clinician perceptions of electronic growth charting using EHR.Methods: An online survey of pediatricians and family practitioners in Kentucky inquiring about EHR usage, specifically use of growth charting with EHR, was conducted.Results: Forty-six percent of respondents utilized EHRs, with pediatricians lagging family practitioners, and academic pediatricians lagging non-academicians. There was no consensus on EHR platforms being used. Almost a third of those who used EHR did not utilize electronic growth charting. Clinicians using EHR reported that electronic growth charts would improve clinician satisfaction and clinical efficiency as well as parent satisfaction and parent education. Only 12% of respondents provided copies of growth charts to parents at the end of their visit and discussed growth parameters with parents, with clinicians using EHR more likely to engage in these activities than nonEHR users.Conclusion: Although Kentucky clinicians continue to slowly adopt EHRs, clinician perceptions and practices reflect enduring barriers to widespread use of electronic growth charting in pediatric and family practice. However, our results suggest that electronic growth charting has important benefits for both clinicians and patients, and greater adoption is expected as EHRs become standard across health care systems.Citation: Soares N, Vyas K, Perry B. Clinician perceptions of pediatric growth chart use and electronic health records in Kentucky. Appl Clin Inf 2012; 3: 437–447http://dx.doi.org/10.4338/ACI-2012-06-RA-0023

Studies of Ge/Si(100) and Observation of Atomic Steps on Si(100) using Biassed Secondary Electron Imaging in a UHV STEM

1990 ◽  
Vol 48 (1) ◽  
pp. 308-309
Author(s):  
Mohan Krishnamurthy ◽  
Jeff S. Drucker ◽  
John A. Venablest
Keyword(s):  
Secondary Electron ◽  
Critical Thickness ◽  
Surface Defects ◽  
Film Growth ◽  
Growth Parameters ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Surface Steps ◽  
Epitaxial Crystal Growth ◽  
Electron Imaging

Secondary Electron Imaging (SEI) has become a useful mode of studying surfaces in SEM[1] and STEM[2,3] instruments. Samples have been biassed (b-SEI) to provide increased sensitivity to topographic and thin film deposits in ultra high vacuum (UHV)-SEM[1,4]; but this has not generally been done in previous STEM studies. The recently developed UHV-STEM ( codenamed MIDAS) at ASU has efficient collection of secondary electrons using a 'parallelizer' and full sample preparation system[5]. Here we report in-situ deposition and annealing studies on the Ge/Si(100) epitaxial system, and the observation of surface steps on vicinal Si(100) using b-SEI under UHV conditions in MIDAS.Epitaxial crystal growth has previously been studied using SEM and SAM based experiments [4]. The influence of surface defects such as steps on epitaxial growth requires study with high spatial resolution, which we report for the Ge/Si(100) system. Ge grows on Si(100) in the Stranski-Krastonov growth mode wherein it forms pseudomorphic layers for the first 3-4 ML (critical thickness) and beyond which it clusters into islands[6]. In the present experiment, Ge was deposited onto clean Si(100) substrates misoriented 1° and 5° toward <110>. This was done using a mini MBE Knudsen cell at base pressure ~ 5×10-11 mbar and at typical rates of 0.1ML/min (1ML =0.14nm). Depositions just above the critical thickness were done for substrates kept at room temperature, 375°C and 525°C. The R T deposits were annealed at 375°C and 525°C for various times. Detailed studies were done of the initial stages of clustering into very fine (∼1nm) Ge islands and their subsequent coarsening and facetting with longer anneals. From the particle size distributions as a function of time and temperature, useful film growth parameters have been obtained. Fig. 1 shows a b-SE image of Ge island size distribution for a R T deposit and anneal at 525°C. Fig.2(a) shows the distribution for a deposition at 375°C and Fig.2(b) shows at a higher magnification a large facetted island of Ge. Fig.3 shows a distribution of very fine islands from a 525°C deposition. A strong contrast is obtained from these islands which are at most a few ML thick and mottled structure can be seen in the background between the islands, especially in Fig.2(a) and Fig.3.

Evaluation of Azadirachtin on Arthrospira plantensis Gomont growth parameters and antioxidant enzymes

2020 ◽  
Vol 56 ◽  
pp. 8
Author(s):  
Hatice Tunca ◽  
Ali Doğru ◽  
Feray Köçkar ◽  
Burçin Önem ◽  
Tuğba Ongun Sevindik
Keyword(s):  
Enzyme Activity ◽  
Growth Parameters ◽  
Arthrospira Platensis ◽  
Proline Content ◽  
Enzyme Analysis ◽  
Free Proline ◽  
Sod Activity ◽  
Pesticide Pollution ◽  
Antioxidant Parameters ◽  
Mda Content

Azadirachtin (Aza) used as insecticide due to inhibiting growth of insects and preventing them from feeding on plants. To understand the effects of contamination of this insecticide on phototrophs, and to determine the responses of these organisms against these insecticides are extremely important in understanding how the ecosystem is affected. In this study, chlorophyll-a amount, OD 560 and antioxidant parameters (total SOD, APX, GR, Proline, MDA and H2O2) were determined in order to understand the effect of Aza on Arthrospira platensis Gomont. Aza was applied between 0–20 μg mL−1 concentrations for 7 days in the study. Enzyme analysis was conducted at the end of the 7th day. There was a statistically significant decrease in the absorbance of OD560 and the chlorophyll-a content in A. platensis cultures exposed to the Aza (0–20 μg mL−1) during 7 days due to the increase in pesticide levels. SOD activity decreased at 8, 16 and 20 μg mL−1 concentrations; GR enzyme activity showed a significant decrease compared to the control at a concentration of 20 μg mL−1. APX activity did not change significantly compared to control. The MDA content increased significantly at 16 and 20 μg mL−1 concentrations. The H2O2 content significantly increased at 12, 16 and 20 μg mL−1 concentrations (p < 0.05) while the free proline content decreased at 4 μg mL−1 concentration (p < 0.05). As a result, regarding the Aza concentrations used in this study may be a step to prevent pesticide pollution in the environment.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

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