The Origins of the Goss Orientation in Non‐Oriented Electrical Steel and the Evolution of the Goss Texture during Thermomechanical Processing

2019 ◽  
Vol 90 (7) ◽  
pp. 1800582 ◽  
Author(s):  
Mehdi Mehdi ◽  
Youliang He ◽  
Erik J. Hilinski ◽  
Leo A. I. Kestens ◽  
Afsaneh Edrisy
2010 ◽  
Vol 160 ◽  
pp. 241-246
Author(s):  
W. Mao ◽  
Y. Li ◽  
Z. An ◽  
G. Zhu ◽  
Ping Yang

The compact strip processing technology and the technologies for conventional grain oriented electrical steels were used to process the low cost grain-oriented electrical steel successfully, in which the reheating temperature for hot rolling was about 1150 oC, and strong Goss texture was obtained after the secondary recrystallization. It is indicated that the density of inhibitor particles produced under the condition of low temperature hot rolling was high enough to induce the necessary secondary recrystallization during final annealing, so that many Goss grains could grow. The mis-orientations of Goss grains to the recrystallization matrix were calculated and observed. High angle boundaries enveloped frequently Goss grains, while the growth of other grains would have the possibility to meet low angle boundaries or low mobile boundaries. Goss grains neighboring larger size grains might be protected by the further precipitation of inhibitor particles in high angel boundaries during the temperature rising stage of the secondary recrystallization and survived somehow after the growth competition.


2020 ◽  
Vol 51 (12) ◽  
pp. 6498-6504
Author(s):  
Mo Ji ◽  
Carl Slater ◽  
Claire Davis

AbstractThe feasibility of establishing thermomechanical conditions to promote {100}//ND fiber texture via strain-induced boundary migration (SIBM) recrystallization mechanism in a non-grain oriented (NGO) electrical steel was investigated. Single-hit uniaxial compression at various temperatures and strains has been applied on Fe-6 wt pct Si to establish the relationship between stored energy and the softening mechanisms. Recovery only and recrystallization by SIBM or by subgrain growth (SGG) have been observed depending on the stored energy level. A strong {100}//ND fiber recrystallization texture, i.e., 45 pct area fraction, was seen in the sample which was deformed to 0.2 strain at 650 °C and then annealed at 1000 °C for 15 minutes, whereas only 13 pct {100}//ND fiber component was observed after 0.4 strain at 500 °C followed by the same annealing treatment. By examining the same microstructural region before and after annealing via EBSD, it has been shown that {100}//ND textured recrystallized grains were formed adjacent to the {100}// ND textured deformed matrix. Low stored energy has been shown to favor the formation of {100}//ND texture recrystallized grains via SIBM recrystallization mechanism attributed to its slow recrystallization nucleation rate. The results from the deformation studies have been used to suggest a processing window map concept to define the recovery, SIBM, and SGG regions for the starting as-cast columnar microstructure.


2007 ◽  
Vol 550 ◽  
pp. 485-490 ◽  
Author(s):  
Dorothée Dorner ◽  
Yoshitaka Adachi ◽  
Kaneaki Tsuzaki ◽  
Stefan Zaefferer

A Goss-oriented single crystal was cold rolled up to 89 % thickness reduction, and subsequently annealed at 550°C or 850°C. During deformation most of the initially Goss-oriented material rotated into the two symmetrical {111}<112> orientations. In addition, Goss regions were observed related to microbands or microshear bands. Goss regions in microshear bands formed during straining, whereas Goss regions between microbands were retained from the initial Goss orientation. The recrystallisation texture for annealing temperatures of both 550°C and 850°C is characterised by a Goss texture. However, the origin of the Goss recrystallisation nuclei appeared to be different for the different annealing conditions. In the material annealed at 550°C, the Goss texture originated from the Goss regions in the microshear bands. In contrast, for an annealing temperature of 850°C, the Goss grains between the microbands are likely to form recrystallisation nuclei.


2007 ◽  
Vol 550 ◽  
pp. 527-532 ◽  
Author(s):  
Jae Young Choi ◽  
Chel Min Park ◽  
Jong Tae Park ◽  
Jae Kwan Kim

The effects of hot band annealing temperature on the texture of the 2%Si nonoriented electrical steel were investigated. Slab was hot rolled and then hot band annealed in the temperature range of 900°C~1100°C. The magnetic flux density and the core loss were improved by the hot band annealing because of the texture improvement. As the hot band annealing temperature was increased, the magnetic properties were improved. The microstructure of the hot band was composed of a recrystallized structure at the surface and a deformation structure near the middle plane. These hot bands were completely recrystallized after annealing above 1000°C. The main texture of the hot band was rotated cube and gamma-fibre. After hot band annealing, rotated cube changed to cube texture and gamma-fibre intensity gradually decreased. In the case of non-annealed hot band, rotated cube in the middle plane was changed to near {111}<112>texture and Goss texture in the surface to gamma fibre after final annealing. In the case of the hot band annealed at 900°C, rotated cube near the middle plane changed to Goss texture and Goss texture in the surface to rotated cube after final annealing. After final annealing, the {111} and {112} texture was dramatically decreased as the hot band annealing temperature was higher. The total {100} texture intensity was not changed. Cube texture {100}<001> increased and rotated cube texture {100}<011> decreased. The {110} texture increased after hot band annealing irrespective of temperature. As the hot band annealing temperature was higher, the Goss texture increased, and this increase of Goss texture causes the anisotropy of the magnetic flux density.


2007 ◽  
Vol 558-559 ◽  
pp. 723-728
Author(s):  
B.J. Duggan ◽  
M.Z. Quadir ◽  
Richard Penelle

The idea that a single subgrain is sufficient to produce a single recrystallised grain is the simplest explanation for the recrystallisation process. Likewise, a single Goss oriented grain arising from the primary recrystallisation process is the simplest unit which can give rise to a secondary Goss oriented grain. More complicated cluster models, for example subgrain coalescence is also considered feasible for primary recrystallisation, clusters of Goss oriented grains might be another mechanism for forming Goss oriented secondary grains. This paper examines the cluster theory using material which is produced by the ARMCO process which requires two stages of rolling. In order to achieve this aim it is necessary to destroy the connectivity between individual Goss oriented grains by using thin foils derived from sheet which gives a strong Goss texture on conventional annealing. The foils were sectioned from the subsurface which had a strong η fibre after primary recrystallisation, and ranged in thickness from 18μm (the average grain size after primary recrystallisation) up to 80μm, which is the approximate thickness of the η textured layer. The central layer, which had the classical {111}<hkl> primary recrystallised texture, was similarly processed, but this did not produce secondary recrystallisation. The experiment followed the secondary recrystallisation process in the same area using sequential annealing in a vacuum furnace by a combination of EBSD and Channelling contrast microscopy. The data does not support the high energy boundary hypothesis nor the CSL explanation. But it is clear that connectivity is important, because when this is destroyed by the thin foil two dimensional morphology, as it is in the thinnest foil, secondary recrystallisation does not occur.


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