A 22.3% Efficient p‐Type Back Junction Solar Cell with an Al‐Printed Front‐Side Grid and a Passivating n + ‐Type Polysilicon on Oxide Contact at the Rear Side

Solar RRL ◽  
2020 ◽  
Vol 4 (12) ◽  
pp. 2000435 ◽  
Author(s):  
Byungsul Min ◽  
Nadine Wehmeier ◽  
Till Brendemuehl ◽  
Agnes Merkle ◽  
Felix Haase ◽  
...  
Keyword(s):  
Solar Cell ◽  
Rear Side ◽  
Front Side ◽  
Junction Solar Cell ◽  
P Type

scholarly journals High-Efficiency p-Type Si Solar Cell Fabricated by Using Firing-Through Aluminum Paste on the Cell Back Side

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3388 ◽  
Author(s):  
Guang Wu ◽  
Yuan Liu ◽  
Mengxue Liu ◽  
Yi Zhang ◽  
Peng Zhu ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Glass Frit ◽  
Open Circuit ◽  
Rear Side ◽  
Back Side ◽  
Al2o3 Layer ◽  
Recombination Centers ◽  
Powder Content ◽  
P Type

Firing-through paste used for rear-side metallization of p-type monocrystalline silicon passivated emitter and rear contact (PERC) solar cells was developed. The rear-side passivation Al2O3 layer and the SiNx layer can be effectively etched by the firing-through paste. Ohmic contact with a contact resistivity between 1 to 10 mΩ·cm2 was successfully fabricated. Aggressive reactive firing-through paste would introduce non-uniform etching and high-density recombination centers at the Si/paste interface. Good balance between low resistive contact formation and relatively high open-circuit voltage can be achieved by adjusting glass frit and metal powder content in the paste. Patterned dot back contacts formed by firing-through paste can further decrease recombination density at the Si/paste interface. A P-type solar cell with an area of 7.8 × 7.8 cm2 with a Voc of 653.4 mV and an efficiency of 19.61% was fabricated.

Low Cost Electro-Deposition of Cuprous Oxide P-N Homo-Junction Solar Cell

2013 ◽  
Vol 827 ◽  
pp. 38-43 ◽  
Author(s):  
Faiz Arith ◽  
S.A.M. Anis ◽  
Muzalifah Mohd Said ◽  
Cand M. Idzdihar Idris
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Electrical Energy ◽  
Deposition Process ◽  
Crystal Silicon ◽  
Electro Deposition ◽  
Junction Solar Cell ◽  
P Type

Most of the photovoltaic industry uses wafer of single-crystal and poly-crystal silicon as a material of their photovoltaic (PV) modules. However, the cost of these modules is high due to the material and processing cost. Cuprous oxides (Cu2O) have several features that suitable for future photovoltaic applications. Cu2O can be prepared with simple methods at very low cost. Cu2O p-n homojunction solar cell is a device that converts sunlight to electrical energy, consists of two similar materials for its p-n junction, which is Cu2O. The p-type and n-type of Cu2O thin films are then fabricated to produce solar cells. Other layers aluminium and glass substrate coated with indium tin oxide (ITO) need to be added as a contact for electrons movement. In this study, p-type Cu2O, n-type Cu2O and p-n junction are prepared in order to become accustomed for solar cell applications. To achieve the optimum deposition conditions, p-n junction solar cell is prepared by two-steps electrochemical deposition process. The result from x-ray diffraction (XRD) shows that the peak is dominated by CuO (1, 1, 1). P-n junction is in between the p-type and n-type of Cu2O layer. Al has the thickness of 427.5nm. The second and the third layer are p and n type of Cu2O, which have the thickness of 106.9nm and 92.3nm, respectively. Finally the thickness of ITO layer is 131.1nm.An absorption experiment at AM1 light is performed in order to get the I-V curves, and in fact, to study the electrical solar cells p-n homojunction. Based on I-V curve test, the level of energy conversion of cell is 0.00141% with fill factor, FF 0.94813 which proved that Cu2O p-n homojunction solar cell can be fabricated and produced at very low cost and well function.

Band Gap Optimization of Thin Film a-Si:H Bifacial Solar Cells (BFSCs) Using AFORS-HET

2019 ◽  
Vol 966 ◽  
pp. 409-414
Author(s):  
Dadan Hamdani ◽  
Yoyok Cahyono ◽  
Gatut Yudoyono ◽  
Darminto
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Maximum Efficiency ◽  
Rear Side ◽  
Front Side ◽  
P Type

Using well-practiced AFORS-HET software, thin film a-Si:H Bifacial Solar Cells (BFSCs) has been investigated and simulated. The aim of this study is to simulate performances of a-Si:H BFCs with structure of Glass/TCO/(n) a-Si:H/(i) a-Si:H/(p) a-Si:H/TCO/Glass. The results show that the optimized band gap for each layers are 2.0 eV (n-type), 1.7 eV (i-type) and 2.0 eV (p-type), respectively. The final simulation show that a significant increase VOC, JSC, FF and Eff for both side of a-Si:H BFSCs. Finally, the maximum efficiency obtained are 7.79% for the front side and 5.68% for the rear side, respectively.

p-type Heterojunction Bifacial Solar Cell with Rear Side Carrier Selective Contact

2021 ◽  
pp. 108658
Author(s):  
Sanchari Chowdhury ◽  
Muhammad Quddammah Khokhar ◽  
Sunhwa Lee ◽  
Youngkuk Kim ◽  
Jinjoo Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Rear Side ◽  
P Type ◽  
Bifacial Solar Cell

Theoretical Studies of InGaN/GaN Multiple Junction Solar Cell with Enhanced Tunneling Junction Diode

2014 ◽  
Vol 895 ◽  
pp. 535-538 ◽  
Author(s):  
Shahzad Hussain ◽  
Ghulam Ali ◽  
Haris Mehmood ◽  
Muhammad Omar ◽  
Tahir Zaidi
Keyword(s):  
Solar Cell ◽  
Tunneling Junction ◽  
Junction Solar Cell ◽  
Type Layer ◽  
Multijunction Solar Cells ◽  
Recent Developments ◽  
Double Junction ◽  
Heavily Doped ◽  
P Type ◽  
Efficient Solar Cell

Recent developments in the growth of InGaN layers made it possible to grow a heavily doped p-type layer with Indium concentration up to 40%. In this work, a tunnel junction based on these developments has been designed with the use of Silvaco TCAD. This diode introduces a low resistive path to the current carriers, effectively adds voltages and encounters the parasitic effects of the stacked sub-cells. A double-junction solar cell is designed based on our interfacing tunnel diode and simulated results are presented in this paper. Remarkable results are achieved comparing to the existing InGaN based multijunction solar cells. A highVocof ~3.1V and conversion efficiency greater than 17.5% has been achieved under AM 1.5. This paper also highlights and discusses the challenges in fabrication of such a highly efficient solar cell.

Low-cost rear side floating junction solar-cell issues on mc-Si

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3431-3437 ◽  
Author(s):  
S. De Wolf ◽  
F. Duerinckx ◽  
G. Agostinelli ◽  
G. Beaucarne
Keyword(s):  
Solar Cell ◽  
Low Cost ◽  
Rear Side ◽  
Junction Solar Cell

scholarly journals Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

2013 ◽  
Vol 2013 ◽  
pp. 1-13 ◽  
Author(s):  
Atteq ur Rehman ◽  
Soo Hong Lee
Keyword(s):  
Solar Cell ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Rear Side ◽  
Silicon Substrates ◽  
Crystalline Silicon Solar Cells ◽  
Cell Structures ◽  
Major Factors ◽  
P Type ◽  
Solar Cell Technology

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

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