Effective Lifetime Approaching 1 ms in High‐Resistivity p‐Type Kerfless Multi‐Crystalline Wafers

Solar RRL ◽  
2019 ◽  
Vol 3 (4) ◽  
pp. 1900009
Author(s):  
Jasmin Hofstetter ◽  
Ray Fraser ◽  
Ralf Jonczyk ◽  
Ali Ersen ◽  
Laureen Sanderson ◽  
...  
Keyword(s):  
High Resistivity ◽  
Effective Lifetime ◽  
P Type

Exceeding 1 ms effective lifetime in High High-Resistivity P-Type Kerfless Multi-crystalline Wafers

2019 ◽  
Author(s):  
Jasmin Hofstetter ◽  
Ray Fraser ◽  
Ralf Jonczyk ◽  
Ali Ersen ◽  
John Linton ◽  
...  
Keyword(s):  
High Resistivity ◽  
Effective Lifetime ◽  
P Type

Ohmic and Rectifying Contacts on High Resistivity P-Type Cadmium Telluride

1982 ◽  
Vol 16 ◽  
Author(s):  
A. Musa ◽  
J.P. Ponpon ◽  
M. Hage-Ali
Keyword(s):  
Cadmium Telluride ◽  
Current Flow ◽  
Electrical Characterization ◽  
High Resistivity ◽  
Experimental Conditions ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gold Contact ◽  
P Type ◽  
A Current

ABSTRACTOhmic and rectifying contacts on high resistivity etched P-type cadmium telluride have been studied in order to produce diode structures.For this,we have first investigated the properties of gold contacts obtained by chemical reactions of CdTe dippedin gold chloride.Both electrical characterization and structure have been analyzed as a function of the experimental conditions of the contact deposition.The results can be interpreted in terms of a current flow enhanced by tunnelling through the Au-CdTe junction and related to the structure of the interface a few tens of nanometer below the gold contact. In addition,several rectifying contacts have been investigated , in order to achieve a structure having low leakage current.

Investigation of Vacancies in GaN by Positron Annihilation

1996 ◽  
Vol 449 ◽  
Author(s):  
L. V. JØrgensen ◽  
A. C. Kruseman ◽  
H. Schut ◽  
A. Van Veen ◽  
M. Fanciulli ◽  
...  
Keyword(s):  
Positron Beam ◽  
High Resistivity ◽  
S Parameter ◽  
Yield Information ◽  
Beam Analysis ◽  
Core Electrons ◽  
P Type ◽  
Coincidence Measurements ◽  
Higher Sensitivity ◽  
Mg Doped

ABSTRACTPositron beam analysis has been performed on autodoped n-type, semi-insulating and Mg doped p-type epitaxially grown layers of GaN on sapphire. Doppler Broadening measurements clearly indicate the presence of vacancies in the intrinsically autodoped n-type GaN by an increase in the annihilation Doppler lineshape S-parameter of 1.04 relative to the value for the high resistivity sample. This value is typical for vacancy-type defects in compound semiconductors such as GaAs. Results of experiments with higher sensitivity to core-electrons are also presented. These two detector coincidence measurements yield information on the chemical environment surrounding the vacancies. The results are consistent with the presence of Ga vacancies in the autodoped n-type sample.

scholarly journals Monolithically Integrated Diffused Silicon Two-Zone Heaters for Silicon-Pyrex Glass Microreactors for Production of Nanoparticles: Heat Exchange Aspects

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 818
Author(s):  
Milena Rašljić Rafajilović ◽  
Katarina Radulović ◽  
Milče M. Smiljanić ◽  
Žarko Lazić ◽  
Zoran Jakšić ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafer ◽  
Titanium Dioxide Nanoparticles ◽  
Pyrex Glass ◽  
High Resistivity ◽  
Glass Wafer ◽  
Monolithically Integrated ◽  
Different Temperatures ◽  
And Performance ◽  
P Type

We present the design, simulation, fabrication and characterization of monolithically integrated high resistivity p-type boron-diffused silicon two-zone heaters in a model high temperature microreactor intended for nanoparticle fabrication. We used a finite element method for simulations of the heaters’ operation and performance. Our experimental model reactor structure consisted of a silicon wafer anodically bonded to a Pyrex glass wafer with an isotropically etched serpentine microchannels network. We fabricated two separate spiral heaters with different temperatures, mutually thermally isolated by barrier apertures etched throughout the silicon wafer. The heaters were characterized by electric measurements and by infrared thermal vision. The obtained results show that our proposed procedure for the heater fabrication is robust, stable and controllable, with a decreased sensitivity to random variations of fabrication process parameters. Compared to metallic or polysilicon heaters typically integrated into microreactors, our approach offers improved control over heater characteristics through adjustment of the Boron doping level and profile. Our microreactor is intended to produce titanium dioxide nanoparticles, but it could be also used to fabricate nanoparticles in different materials as well, with various parameters and geometries. Our method can be generally applied to other high-temperature microsystems.

scholarly journals Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2419
Author(s):  
Boqun Dong ◽  
Andrei Afanasev ◽  
Rolland Johnson ◽  
Mona Zaghloul
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Device Fabrication ◽  
Effective Lifetime ◽  
Additional Layer ◽  
Carrier Recombination ◽  
Multiphysics Simulations ◽  
Current Voltage ◽  
Piezoelectric Fields ◽  
P Type

We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.

Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC

2008 ◽  
Vol 47 (9) ◽  
pp. 7052-7055 ◽  
Author(s):  
Hideharu Matsuura ◽  
Hirokazu Yanase ◽  
Miyuki Takahashi
Keyword(s):  
High Purity ◽  
High Resistivity ◽  
Intrinsic Defects ◽  
P Type

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

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