Ultrasensitive Photodetectors Promoted by Interfacial Charge Transfer from Layered Perovskites to Chemical Vapor Deposition‐Grown MoS 2

Small ◽  
2021 ◽  
pp. 2102461
Author(s):  
Wen Wen ◽  
Wenbin Zhang ◽  
Xiaojian Wang ◽  
Qingliang Feng ◽  
Zheng Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interfacial Charge Transfer ◽  
Interfacial Charge ◽  
Layered Perovskites

scholarly journals Molybdenum Disulfide Nanoflakes Grown by Chemical Vapor Deposition on Graphite: Nucleation, Orientation, and Charge Transfer

2020 ◽  
Vol 124 (4) ◽  
pp. 2689-2697 ◽  
Author(s):  
Erik Pollmann ◽  
Juliana M. Morbec ◽  
Lukas Madauß ◽  
Lara Bröckers ◽  
Peter Kratzer ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Chemical Vapor

Thin-film phases of organic charge-transfer complexes formed by chemical vapor deposition

2009 ◽  
Vol 518 (1) ◽  
pp. 299-304 ◽  
Author(s):  
Hiroshi Wada ◽  
Dominique de Caro ◽  
Lydie Valade ◽  
Tatsuhiko Ozawa ◽  
Yoshimasa Bando ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Charge Transfer Complexes

scholarly journals Charge transfer in crystalline germanium/monolayer MoS2heterostructures prepared by chemical vapor deposition

Nanoscale ◽  
2016 ◽  
Vol 8 (44) ◽  
pp. 18675-18681 ◽  
Author(s):  
Yung-Chen Lin ◽  
Ismail Bilgin ◽  
Towfiq Ahmed ◽  
Renjie Chen ◽  
Doug Pete ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystalline Germanium

scholarly journals Correction to “Molybdenum Disulfide Nanoflakes Grown by Chemical Vapor Deposition on Graphite: Nucleation, Orientation, and Charge Transfer”

2020 ◽  
Vol 124 (10) ◽  
pp. 5887-5887
Author(s):  
Erik Pollmann ◽  
Juliana M. Morbec ◽  
Lukas Madauß ◽  
Lara Bröckers ◽  
Peter Kratzer ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Chemical Vapor

scholarly journals Improved Photoelectrochemical Performance of MoS2 through Morphology-Controlled Chemical Vapor Deposition Growth on Graphene

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1585
Author(s):  
Dong-Bum Seo ◽  
Tran Nam Trung ◽  
Sung-Su Bae ◽  
Eui-Tae Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Chemical Vapor ◽  
Full Potential ◽  
Mos2 Nanosheets ◽  
Photoelectrochemical Performance ◽  
Chemical Vapor Deposition Growth ◽  
Vertically Aligned

The morphology of MoS2 nanostructures was manipulated from thin films to vertically aligned few-layer nanosheets on graphene, in a controllable and practical manner, using metalorganic chemical vapor deposition. The effects of graphene layer and MoS2 morphology on photoelectrochemical (PEC) performance were systematically studied on the basis of electronic structure and transitions, carrier dynamic behavior, and PEC measurements. The heterojunction quality of the graphene/vertical few-layer MoS2 nanosheets was ensured by low-temperature growth at 250−300 °C, resulting in significantly improved charge transfer properties. As a result, the PEC photocurrent density and photoconversion efficiency of the few-layer MoS2 nanosheets significantly increased upon the insertion of a graphene layer. Among the graphene/MoS2 samples, the few-layer MoS2 nanosheet samples exhibited shorter carrier lifetimes and smaller charge transfer resistances than the thin film samples, suggesting that vertically aligned nanosheets provide highly conductive edges as an efficient pathway for photo-generated carriers and have better electronic contact with graphene. In addition, the height of vertical MoS2 nanosheets on graphene should be controlled within the carrier diffusion length (~200 nm) to achieve the optimal PEC performance. These results can be utilized effectively to exploit the full potential of two-dimensional MoS2 for various PEC applications.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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