scholarly journals Wet Etching: Controlling the Facet of ZnO during Wet Chemical Etching Its (0001¯) O‐Terminated Surface (Small 14/2020)

Small ◽  
2020 ◽  
Vol 16 (14) ◽  
pp. 2070076
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Fabrication of Smooth GaN-Based Laser Facets

1998 ◽  
Vol 537 ◽  
Author(s):  
D. A. Stocker ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Surface Roughness ◽  
Chemical Etching ◽  
Field Effect ◽  
Etch Rate ◽  
Wet Etching ◽  
High Resistivity ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
P Type ◽  
Scanning Electron

AbstractA method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {1010}, {1011}, {1012}, and {1013}. The vertical {1010} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

scholarly journals Fabrication of Smooth GaN-Based Laser Facets

1999 ◽  
Vol 4 (S1) ◽  
pp. 799-804 ◽  
Author(s):  
D. A. Stocker ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Chemical Etching ◽  
Field Effect ◽  
Etch Rate ◽  
Wet Etching ◽  
High Resistivity ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Image Position ◽  
P Type ◽  
Scanning Electron

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using hotoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2.μm/min. The crystallographic GaN etch planes are {0001}, {100}, {10}, {10}, and {103}. The vertical {100} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

Fabrication of Quantum Wires by Wet Etching Techniques

1993 ◽  
Vol 325 ◽  
Author(s):  
H. W. Yang ◽  
S. F. Horng ◽  
H. L. Hwang
Keyword(s):  
Quantum Well ◽  
Electron Beam Lithography ◽  
Quantum Confinement ◽  
Chemical Etching ◽  
Quantum Wires ◽  
Blue Shift ◽  
Wet Etching ◽  
Photoluminescence Excitation ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractQuantum Wires Structures Were Fabricated By Patterning Quantum Well Samples With Electron Beam Lithography And Various Wet Chemical Etching Procedures. Wire Structures With 800Å Wire Width Were Achieved By Wet Etching In Nh4Oh / H2O2 / H2O (20:7:973). These Samples Were Characterized By Scanning Electron Microscopy (Sem), Photoluminescence (Pl), And Polarization-Dependent Photoluminescence Excitation (Ple) Measurements. The Pl Spectra Show Significantly Strongpr Peaks Than That Taken From An En-Etched Quantum Well Sample. A Wire Width Of 400Å Was Estimated From The Blue Shift Of Pl Peaks. A 22% Anisotropy Was Observed From Polarization-Dependent Ple Spectra, Further Corroborating The Existence Of Two-Dimensional Quantum Confinement.

scholarly journals Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

2012 ◽  
Vol 49 (2) ◽  
pp. 45-50
Author(s):  
O. Shiman ◽  
V. Gerbreders ◽  
E. Sledevskis ◽  
A. Bulanovs
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Etching ◽  
Etching Rate ◽  
Wet Etching ◽  
Sample Composition ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching Selectivity

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.

Micromachined Active Piezoelectric Structures for Applications above 600 °C

2009 ◽  
Vol 1222 ◽  
Author(s):  
Jan Sauerwald ◽  
Denny Richter ◽  
Holger Fritze ◽  
Erik Ansorge ◽  
Bertram Schmidt
Keyword(s):  
Diffusion Coefficients ◽  
Chemical Etching ◽  
Elevated Temperatures ◽  
Wet Etching ◽  
Preparation Process ◽  
Field Emission Current ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
The Stability ◽  
Piezoelectric Structures

AbstractMiniaturized monolithic langasite structures are micromachined using local doping of lan-gasite and wet chemical etching. The diffusion coefficients of niobium, strontium and praseodymium in langasite are determined in order to control the preparation process and to obtain information about the stability of locally doped structures at elevated temperatures. A wet etching process based on phosphoric acid for langasite is developed and used to manufacture microstructured elements like planar and biconvex membranes as well as field emitter diodes. These elements are characterized with respect to their application relevant properties such as resonator quality factor and field emission current at temperatures of 600 °C and above.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

scholarly journals Controlling the Facet of ZnO during Wet Chemical Etching Its (0001) O‐Terminated Surface

Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals In Situ Study of the Wet Chemical Etching of SiO2 and Nanoparticle@SiO2 Core–Shell Nanospheres

2021 ◽  
Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Core Shell ◽  
In Situ Study ◽  
Wet Chemical ◽  
Wet Chemical Etching

Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Shape Modification ◽  
Etching Technique ◽  
Wet Chemical ◽  
Wet Chemical Etching
Sign in / Sign up

Export Citation Format

Share Document