scholarly journals Intrinsic Effect of Nanoparticles on the Mechanical Rupture of Doubled‐Shell Colloidal Capsule via In Situ TEM Mechanical Testing and STEM Interfacial Analysis

Small ◽  
2020 ◽  
Vol 16 (29) ◽  
pp. 2001978
Author(s):  
Sang T. Pham ◽  
Kiet A. Tieu ◽  
Shanhong Wan ◽  
Jingcheng Hao ◽  
Huynh H. Nguyen ◽  
...  
Keyword(s):  
Mechanical Testing ◽  
In Situ Tem ◽  
Interfacial Analysis ◽  
Intrinsic Effect ◽  
Mechanical Rupture

scholarly journals Application of In-situ TEM Nanoscale Quantitative Mechanical Testing to Elastomers

2019 ◽  
Vol 25 (S2) ◽  
pp. 1524-1525
Author(s):  
Christopher M. Barr ◽  
Dan Qu ◽  
William M. Mook ◽  
Bryan Korth ◽  
Jamie M. Kropka ◽  
...  
Keyword(s):  
Mechanical Testing ◽  
In Situ Tem

scholarly journals In-situ TEM mechanical testing of nanocrystalline zirconium thin films

2015 ◽  
Vol 152 ◽  
pp. 105-108 ◽  
Author(s):  
Baoming Wang ◽  
Vikas Tomar ◽  
Aman Haque
Keyword(s):  
Thin Films ◽  
Mechanical Testing ◽  
In Situ Tem

scholarly journals In situ TEM Mechanical Testing: An Emerging Approach for Characterization of Polycrystalline, Irradiated Alloys

2016 ◽  
Vol 22 (S3) ◽  
pp. 1478-1479
Author(s):  
Janelle P. Wharry ◽  
Kayla H. Yano ◽  
Matthew J. Swenson ◽  
Yaqiao Wu
Keyword(s):  
Mechanical Testing ◽  
In Situ Tem

scholarly journals Double-tilt in situ TEM holder with multiple electrical contacts and its application in MEMS-based mechanical testing of nanomaterials

2015 ◽  
Vol 156 ◽  
pp. 23-28 ◽  
Author(s):  
Rodrigo A. Bernal ◽  
Rajaprakash Ramachandramoorthy ◽  
Horacio D. Espinosa
Keyword(s):  
Mechanical Testing ◽  
Electrical Contacts ◽  
In Situ Tem

Connecting in situ TEM mechanical testing with bulk properties of irradiated materials

2012 ◽  
Vol 18 (S2) ◽  
pp. 1344-1345
Author(s):  
A.M. Minor ◽  
P. Hosemann ◽  
D. Kiener
Keyword(s):  
Mechanical Testing ◽  
In Situ Tem ◽  
Bulk Properties

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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