Exploration of Formation and Size‐Evolution Pathways of Thiolate‐Gold Nanoclusters in the CO‐Directed [Au 25 (SR) 18 ] − Synthesis

Size Evolution Dynamics of Gold Nanoclusters at an Atom-Precision Level: Ligand Exchange, Growth Mechanism, Electrochemical, and Photophysical Properties

The Journal of Physical Chemistry Letters ◽

10.1021/acs.jpclett.0c00199 ◽

2020 ◽

Vol 11 (5) ◽

pp. 1781-1788 ◽

Cited By ~ 4

Author(s):

Manju P. Maman ◽

Akhil S. Nair ◽

Haritha Cheraparambil ◽

Biswarup Pathak ◽

Sukhendu Mandal

Keyword(s):

Growth Mechanism ◽

Ligand Exchange ◽

Photophysical Properties ◽

Gold Nanoclusters ◽

Size Evolution ◽

Precision Level ◽

Evolution Dynamics

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Investigation of irradiation-induced nucleation processes in silicon and germanium

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137495 ◽

1995 ◽

Vol 53 ◽

pp. 224-225

Author(s):

Harry A. Atwater ◽

C.M. Yang ◽

K.V. Shcheglov

Keyword(s):

Room Temperature ◽

Crystal Size ◽

Initial Distribution ◽

Engineering Control ◽

Size Evolution ◽

Silicon And Germanium ◽

Ge Quantum Dot ◽

And Control ◽

Germanium Quantum Dots ◽

Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

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