Critical Annealing Temperature for Stacking Orientation of Bilayer Graphene

Small ◽  
2018 ◽  
Vol 14 (39) ◽  
pp. 1802498 ◽  
Author(s):  
Zhenwei Zhu ◽  
Linjie Zhan ◽  
Tien-Mo Shih ◽  
Wen Wan ◽  
Jie Lu ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Bilayer Graphene ◽  
Critical Annealing

scholarly journals Gold Nanoparticle Sensor for the Visual Detection of Pork Adulteration in Meatball Formulation

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
M. E. Ali ◽  
U. Hashim ◽  
S. Mustafa ◽  
Y. B. Che Man ◽  
Kh. N. Islam
Keyword(s):  
Annealing Temperature ◽  
Visual Detection ◽  
Low Cost ◽  
Absorption Peak ◽  
Label Free ◽  
Food Standards ◽  
Kosher Food ◽  
20 Nm ◽  
Induced Aggregation ◽  
Critical Annealing

We visually identify pork adulteration in beef and chicken meatball preparations using 20 nm gold nanoparticles (GNPs) as colorimetric sensors. Meatball is a popular food in certain Asian and European countries. Verification of pork adulteration in meatball is necessary to meet the Halal and Kosher food standards. Twenty nm GNPs change color from pinkish-red to gray-purple, and their absorption peak at 525 nm is red-shifted by 30–50 nm in 3 mM phosphate buffer saline (PBS). Adsorption of single-stranded DNA protects the particles against salt-induced aggregation. Mixing and annealing of a 25-nucleotide (nt) single-stranded (ss) DNA probe with denatured DNA of different meatballs differentiated well between perfectly matched and mismatch hybridization at a critical annealing temperature. The probes become available in nonpork DNA containing vials due to mismatches and interact with GNPs to protect them from salt-induced aggregation. Whereas, all the pork containing vials, either in pure and mixed forms, consumed the probes totally by perfect hybridization and turned into grey, indicating aggregation. This is clearly reflected by a well-defined red-shift of the absorption peak and significantly increased absorbance in 550–800 nm regimes. This label-free low-cost assay should find applications in food analysis, genetic screening, and homology studies.

scholarly journals A mutant screening method by critical annealing temperature-PCR for site-directed mutagenesis

2013 ◽  
Vol 13 (1) ◽  
pp. 21 ◽  
Author(s):  
Ying Liu ◽  
Ting Wu ◽  
Jian Song ◽  
Xuelian Chen ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Screening Method ◽  
Site Directed Mutagenesis ◽  
Directed Mutagenesis ◽  
Mutant Screening ◽  
Critical Annealing

RAMAN SCATTERING STUDY OF Ag+-IMPLANTED β-ALUMINA CRYSTALS

1989 ◽  
Vol 03 (15) ◽  
pp. 1179-1183
Author(s):  
YIPING FENG ◽  
MINGSHENG ZHANG ◽  
GONGJIAN HU ◽  
QIANG CHEN
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Silver Ion ◽  
Vacancy Clusters ◽  
Resonance Modes ◽  
Conduction Plane ◽  
Scattering Study ◽  
Critical Annealing

We have measured Raman spectra of sample of sodium β-alumina and samples with silver ion implantation where one kind of sample was not annealed after the implantation, and the others were Ag +-implanted with annealing for 30 minutes at 300, 400, 500 and 700°C, respectively. Raman spectra show that silver ion implantation disturbs sublattice of Na + in β-alumina with some disorder features and some resonance modes appeared in the Raman spectra. We have found the critical annealing temperature near 400°C, above which the silver ion, typically with small activation energy 0.18 eV, gains enough energy to diffuse rapidly through the vacancy clusters formed by silver ion implantation and also through the conduction plane of crystal between clusters in β-alumina with high ionic conductivity.

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Effect of annealing temperature on luminescence properties of ZnWO 4 :Eu 3+ nanophosphor

2019 ◽  
Vol 14 (5) ◽  
pp. 496-500 ◽  
Author(s):  
Chunyang Li ◽  
Xiaodi Du ◽  
Yurong Shi ◽  
Zhenling Wang
Keyword(s):  
Annealing Temperature ◽  
Luminescence Properties
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