scholarly journals Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications

Small ◽  
2017 ◽  
Vol 13 (45) ◽  
pp. 1701998 ◽  
Author(s):  
Baodan Liu ◽  
Jing Li ◽  
Wenjin Yang ◽  
Xinglai Zhang ◽  
Xin Jiang ◽  
...  
Keyword(s):  
Solid Solution ◽  
Semiconductor Solid Solution

scholarly journals Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

2020 ◽  
Vol 6 (9) ◽  
pp. 10-17
Author(s):  
A. Razzakov ◽  
A. Matnazarov ◽  
M. Latipova ◽  
A. Japakov
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Growth Direction ◽  
Si Substrates ◽  
Growth Modes ◽  
Physico Chemical ◽  
Technological Growth ◽  
Crystal Films ◽  
Semiconductor Solid Solution ◽  
Film Interface

Abstract. Single-crystal films of a graded-gap solid solution Si1-xGex (0 <x <1) was grown on Si substrates from limited tin, gallium solution-melt. Accordingly, liquid phase epitaxy method was applied in the process. The formation of dislocations, grown under various technological conditions, at the substrate-film interface along the growth direction of the Si1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.

scholarly journals Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics

2015 ◽  
Vol 16 (1) ◽  
pp. 111-115
Author(s):  
V. А. Romaka ◽  
P. Rogl ◽  
Yu. V. Stadnyk ◽  
L. P. Romaka ◽  
R. O. Korzh ◽  
...  
Keyword(s):  
Solid Solution ◽  
Structural Defects ◽  
Unknown Mechanism ◽  
Semiconductor Solid Solution

The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті  ≈ 9.5·1019–3.6·1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed.

Production technology and optical absorption characteristics of CuIn0.95Ga0.05Se2 semiconductor solid solution films

2016 ◽  
Vol 42 (7) ◽  
pp. 715-717 ◽  
Author(s):  
M. A. Aliev ◽  
S. N. Kallaev ◽  
T. M. Gadzhiev ◽  
R. M. Gadzhieva ◽  
A. M. Ismailov ◽  
...  
Keyword(s):  
Solid Solution ◽  
Optical Absorption ◽  
Production Technology ◽  
Semiconductor Solid Solution ◽  
Absorption Characteristics

scholarly journals Photon treatment effect on the surface and figure of merit of thermoelectric material Bi2Te3−xSex

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
E. Belonogov ◽  
A. Grebennikov ◽  
V. Dybov ◽  
S. Kannykin ◽  
A. Kostyuchenko ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Figure Of Merit ◽  
Nanocrystalline Structure ◽  
Laser Flash ◽  
Surface Layers ◽  
Structure Morphology ◽  
Semiconductor Solid Solution ◽  
Subsurface Layers ◽  
Composition Structure

AbstractThe phase composition, structure, morphology, and thermal conductivity of Bi2Te3−xSex-based semiconductor solid solution after photon treatment (PT) were studied by X-ray diffractometry, SEM, TEM, and the laser flash techniques. It was revealed that PT leads to recrystallization of the subsurface layers of the solid solution with the formation of a heterogeneous nanocrystalline structure. The thermoelectric figure of merit of the semiconductor Bi2Te3−xSex (n-type) solid solution increases after PT due to modification of the surface layers. This is due to the decrease of the thermal conductivity of the studied material after PT.

scholarly journals Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution

2017 ◽  
Vol 18 (2) ◽  
pp. 187-193
Author(s):  
L.P. Romaka ◽  
Yu.V. Stadnyk ◽  
V.V. Romaka ◽  
V.Ya. Krayovsky ◽  
P.-F. Rogl ◽  
...  
Keyword(s):  
Solid Solution ◽  
Band Structure ◽  
Fermi Level ◽  
Crystal Lattice ◽  
Crystallographic Site ◽  
Simultaneous Generation ◽  
Band Structure Calculations ◽  
Semiconductor Solid Solution ◽  
Donor Acceptor ◽  
Structure Calculations

The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn1-xGax semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn1-xGax showed that the speed of movement of Fermi level εF, obtained from the band structure calculations is in agreement with experimental extracted from lnρ(1/T) dependencies. It is shown that with substitution of Sn (5s25p2) with Ga (4s24p1) atoms in 4b crystallographic site both acceptor and donor (vacancies in 4b site) defects are generated.

scholarly journals Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution

2016 ◽  
Vol 17 (2) ◽  
pp. 212-221
Author(s):  
L.P. Romaka ◽  
P.-F. Rogl ◽  
A.M. Нoryn ◽  
V.Ya. Krayovskyy ◽  
Yu.V. Stadnyk ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid Solution ◽  
Electronic Structures ◽  
Energy State ◽  
Structural Defects ◽  
Crystallographic Site ◽  
Simultaneous Generation ◽  
Semiconductor Solid Solution ◽  
Crystal Structural

The features of structural, energy state and electrokinetic characteristics were investigated for Hf1‑xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d26s2) atoms by Ni (3d84s2) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Tm atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d26s2) by Tm (4f135d06s2) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf1-xTmxNiSn.

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