Out-of-Plane Strain Induced in a Moiré Superstructure of Monolayer MoS2and MoSe2on Au(111)

Small ◽  
2017 ◽  
Vol 13 (31) ◽  
pp. 1700748 ◽  
Author(s):  
Satoshi Yasuda ◽  
Ryosuke Takahashi ◽  
Ryo Osaka ◽  
Ryota Kumagai ◽  
Yasumitsu Miyata ◽  
...  
Keyword(s):  
Plane Strain ◽  
Out Of Plane

scholarly journals Out-of-plane strain effect on silicon-based flexible FinFETs

2015 ◽  
Author(s):  
Mohamed T. Ghoneim ◽  
Nasir Alfaraj ◽  
Galo A. Torres Sevilla ◽  
Hossain M. Fahad ◽  
Muhammad M. Hussain
Keyword(s):  
Plane Strain ◽  
Strain Effect ◽  
Out Of Plane ◽  
Silicon Based

Out-of-Plane and In-Plane Strain Measured by Shearography

1996 ◽  
pp. 649-659
Author(s):  
W. Steinchen ◽  
M. Schuth ◽  
L. X. Yang ◽  
G. Kupfer
Keyword(s):  
Plane Strain ◽  
Out Of Plane

Curvature and Out-of-Plane-Strain for Generalized Plane Strain

1972 ◽  
Vol 39 (3) ◽  
pp. 827-829 ◽  
Author(s):  
V. J. Parks
Keyword(s):  
Plane Strain ◽  
Cross Section ◽  
Central Region ◽  
Transverse Cross Section ◽  
Infinite Length ◽  
Out Of Plane ◽  
Plane Solution ◽  
Generalized Plane Strain

Out-of-plane strains and stresses are determined using reciprocity for the central region of very long bars (approaching infinite length) of uniform transverse cross section subjected to the same in-plane loads on every cross section. The loading explicitly specifies no end loads on the bars. The results are obtained without recourse to the in-plane solution. Conversely the end force and moment are determined for the case where the out-of-plane strain is zero.

B23-O-01Peculiar Domains by Local Out-of- Plane Strain in Chemically Modified Bismuth Ferrite Thin Films

Microscopy ◽  
2015 ◽  
Vol 64 (suppl 1) ◽  
pp. i53.1-i53
Author(s):  
Si-Young Choi ◽  
Sung-Dae Kim ◽  
Jungho Ryu
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Bismuth Ferrite ◽  
Chemically Modified ◽  
Out Of Plane ◽  
Ferrite Thin Films

scholarly journals Real-time dual-sensitive shearography for simultaneous in-plane and out-of-plane strain measurements

2019 ◽  
Vol 27 (3) ◽  
pp. 3276 ◽  
Author(s):  
Jie Dong ◽  
Shengjia Wang ◽  
Min Lu ◽  
Martin Jakobi ◽  
Zhanwei Liu ◽  
...  
Keyword(s):  
Real Time ◽  
Plane Strain ◽  
Strain Measurements ◽  
Out Of Plane

scholarly journals Sensitivity of in-Plane Strain Measurement to Calibration Parameter for out-of-Plane Specimen Rotations

2018 ◽  
Vol 58 (7) ◽  
pp. 1115-1132 ◽  
Author(s):  
F. Yasmeen ◽  
R. Balcaen ◽  
M.A. Sutton ◽  
D. Debruyne ◽  
S. Rajan ◽  
...  
Keyword(s):  
Plane Strain ◽  
Strain Measurement ◽  
Calibration Parameter ◽  
Out Of Plane ◽  
Plane Specimen

Dielectric and Electromechanical Behaviour of Relaxor [(1−x)Pb(Mg1/3Nb2/3)O3 -xPbTiO3] Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
N.J. Donnelly ◽  
G. Catalan ◽  
C. Morros ◽  
R.M. Bowman ◽  
J.M. Gregg
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Plane Strain ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Bulk Ceramic ◽  
Atomic Force ◽  
Out Of Plane ◽  
Order Of Magnitude

AbstractThin film capacitor structures of Au / (1−x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 /(La1/2Sr1/2)CoO3 were fabricated by pulsed laser deposition on single crystal {001} MgO substrates. Films were found to be perovskite dominated and highly {001} oriented. Dielectrically, films displayed relaxorlike features, though maximum permittivity was low compared to single crystal or bulk ceramic (∼1400 at peak @1kHz, for x=0.07, 0.1 & 0.2). A field induced piezoelectric coefficient d33 was measured by piezoresponse atomic force microscopy for specific compositions x =0, × =0.07, and x =0.1 and found to be disappointingly low - indicating poor electric field induced strain. Despite this macroscopic electrostrictive coefficients Q33 were found to be (3.6 ± 0.6) ×10−2C−2m4, (2.6 ± 0.2) ×10−2C−2m4, and (0.9 ± 0.3) ×10−2C−2m4 respectively. Crystallographic electrostrictive coefficients were determined by in-situ x-ray diffraction and found to be (4.9 ± 0.2) ×10−2C−2m4 for PMN-(0.07)PT and (1.9 ± 0.1) ×10−2C−2m4 for PMN-(0.1)PT. Considering that all these Q33 values are of the same order of magnitude as found in single crystal experiments (2.5 – 3.8 ×10−2C−2m4), it is suggested that low out-of-plane strain is entirely a result of reduced polarisability rather than reduced electrostrictive coefficients in thin films relative to bulk ceramic or single crystal. An estimate was also made of the Q13 electrostrictive coefficient for PMN and PMN-(0.07)PT by measuring permittivity as a function of applied in-plane strain. The values obtained were -1.31 ×10−2C−2m4 and -0.46 ×10−2C−2m4 respectively.

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