Ternary Alloys Encapsulated within Different MOFs via a Self-Sacrificing Template Process: A Potential Platform for the Investigation of Size-Selective Catalytic Performances

Small ◽  
2017 ◽  
Vol 13 (33) ◽  
pp. 1700683 ◽  
Author(s):  
Lu-Ning Chen ◽  
Hui-Qi Li ◽  
Meng-Wen Yan ◽  
Chao-Fan Yuan ◽  
Wen-Wen Zhan ◽  
...  
Keyword(s):  
Ternary Alloys ◽  
Template Process ◽  
Catalytic Performances

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

Electron microscope studies of the plastic deformation of ternary alloys based on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 1120-1120
Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley
Keyword(s):  
Plastic Deformation ◽  
Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
The Other ◽  
Ternary Alloys ◽  
Dislocation Mobility ◽  
Semiconducting Materials ◽  
Micro Indentation

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.

scholarly journals Understanding the Fundamentals of Microporosity Upgrading in Zeolites: Increasing Diffusion and Catalytic Performances

2021 ◽  
pp. 2100001
Author(s):  
Zhengxing Qin ◽  
Shu Zeng ◽  
Georgian Melinte ◽  
Tomáš Bučko ◽  
Michael Badawi ◽  
...  
Keyword(s):  
Catalytic Performances

scholarly journals Catalytic Antioxidant Activity of Bis-Aniline-Derived Diselenides as GPx Mimics

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4446
Author(s):  
Giancarlo V. Botteselle ◽  
Welman C. Elias ◽  
Luana Bettanin ◽  
Rômulo F. S. Canto ◽  
Drielly N. O. Salin ◽  
...  
Keyword(s):  
Antioxidant Activity ◽  
Hydrogen Bond ◽  
Electronic Properties ◽  
Partial Charge ◽  
Amino Group ◽  
Diphenyl Diselenide ◽  
Charge Delocalization ◽  
Ipso Substitution ◽  
Efficient Route ◽  
Catalytic Performances

Herein, we describe a simple and efficient route to access aniline-derived diselenides and evaluate their antioxidant/GPx-mimetic properties. The diselenides were obtained in good yields via ipso-substitution/reduction from the readily available 2-nitroaromatic halides (Cl, Br, I). These diselenides present GPx-mimetic properties, showing better antioxidant activity than the standard GPx-mimetic compounds, ebselen and diphenyl diselenide. DFT analysis demonstrated that the electronic properties of the substituents determine the charge delocalization and the partial charge on selenium, which correlate with the catalytic performances. The amino group concurs in the stabilization of the selenolate intermediate through a hydrogen bond with the selenium.

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