High Sensitivity, Wearable, Piezoresistive Pressure Sensors Based on Irregular Microhump Structures and Its Applications in Body Motion Sensing

Small ◽  
2016 ◽  
Vol 12 (28) ◽  
pp. 3827-3836 ◽  
Author(s):  
Zongrong Wang ◽  
Shan Wang ◽  
Jifang Zeng ◽  
Xiaochen Ren ◽  
Adrian J. Y. Chee ◽  
...  
Keyword(s):  
Pressure Sensors ◽  
High Sensitivity ◽  
Body Motion ◽  
Motion Sensing ◽  
Piezoresistive Pressure Sensors

scholarly journals Wearable Pressure Sensors Based on Carbonized Graphene Coated Waste Paper Aerogel

2021 ◽  
Author(s):  
Ang Li ◽  
Ce Cui ◽  
Weijie Wang ◽  
Yue Zhang ◽  
Jianyu Zhai ◽  
...  
Keyword(s):  
3D Structure ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Waste Paper ◽  
Low Density ◽  
Detection Range ◽  
Simple Strategy ◽  
Simple Filtration ◽  
Piezoresistive Pressure Sensors ◽  
Main Component

Abstract Graphene is complexed with cellulose fibers to construct 3D aerogels, which is generally considered to be an environmentally friendly and simple strategy to achieve wide sensing, high sensitivity and low detection of wearable piezoresistive pressure sensors. Here, graphene is incorporated into waste paper fibers with cellulose as the main component to prepare graphene coated waste paper aerogel (GWA) using a simple “filtration-oven drying” method under atmospheric pressure. The GWA was further annealed to obtain the carbonized graphene coated waste paper aerogel (C-GWA) to achieve low density and excellent resilience. The result shows that the C-GWA has a rough outer surface due to the 3D structure formed by interpenetrated fibers and the carbon skeleton with wrinkles. The sensor based on GCA shows low density (25mg/cm3), a wide detection range of 0-132 kPa, an ultra-low detection limit of 2.5 Pa (a green bean, ≈ 53.4 mg), and a high sensitivity of 31.6 kPa− 1. In addition, the sensor based on C-GWA with the excellent performance can be used to detect human motions including the pulse of the human body, cheek blowing and bending of human joints. The result indicates that the sensor based on C-GWA shows great potential for wearable electronic products.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

scholarly journals Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications

2015 ◽  
Vol 28 (1) ◽  
pp. 123-131 ◽  
Author(s):  
Milos Frantlovic ◽  
Ivana Jokic ◽  
Zarko Lazic ◽  
Branko Vukelic ◽  
Marko Obradov ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Low Cost ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Correction Method ◽  
Industrial Applications ◽  
Sensor Applications ◽  
Piezoresistive Pressure Sensors ◽  
Mems Pressure Sensors

Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ? 0.3?C can be achieved.

scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy
Keyword(s):  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Differential Pressure ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Piezoresistive Pressure Sensors

Abstract The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.

scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail ◽  
Denis Prigodskiy
Keyword(s):  
Automotive Industry ◽  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Developed Pressure ◽  
Piezoresistive Pressure Sensors

The investigation of the pressure sensor chip's design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a diaphragm has been defined using available technological resources. The pressure sensor chip with an area of 6.15 × 6.15 mm has an average sensitivity S of 34.5 mV/ κPa/V at nonlinearity 2K NL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 κPa. The developed pressure sensor can be used in medicine, automotive industry and highly specialized scientific developments.

scholarly journals Development of High-Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy
Keyword(s):  
Mathematical Model ◽  
Pressure Sensors ◽  
Simulated Data ◽  
High Sensitivity ◽  
Silicon Membrane ◽  
Ultrahigh Sensitivity ◽  
Piezoresistive Pressure Sensors ◽  
The Mathematical Model ◽  
Geometrical Dimensions ◽  
Membrane Deflection

<p>A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (S<sub>samples</sub> = 34.5 mV/kPa/V) and nonlinearity (2K<sub>NL</sub> samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure P<sub>burst</sub> up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).</p>

scholarly journals Development of High-Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy
Keyword(s):  
Mathematical Model ◽  
Pressure Sensors ◽  
Simulated Data ◽  
High Sensitivity ◽  
Silicon Membrane ◽  
Ultrahigh Sensitivity ◽  
Piezoresistive Pressure Sensors ◽  
The Mathematical Model ◽  
Geometrical Dimensions ◽  
Membrane Deflection

Abstract A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV/kPa/V) and nonlinearity (2KNL samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).

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