High Sensitivity Polymer Visible-Near Infrared Photodetectors via an Inverted Device Structure and Manipulation of Injection Barrier Height

Small ◽  
2016 ◽  
Vol 12 (25) ◽  
pp. 3374-3380 ◽  
Author(s):  
Siping Wu ◽  
Biao Xiao ◽  
Baofeng Zhao ◽  
Zhicai He ◽  
Hongbin Wu ◽  
...  
Keyword(s):  
Barrier Height ◽  
Near Infrared ◽  
High Sensitivity ◽  
Infrared Photodetectors ◽  
Device Structure ◽  
Injection Barrier ◽  
Inverted Device ◽  
Inverted Device Structure

Near-infrared polymer light-emitting diodes based on an inverted device structure

2019 ◽  
Vol 7 (39) ◽  
pp. 12114-12120 ◽  
Author(s):  
Jin Xu ◽  
Feng Peng ◽  
Zhenzhong Sun ◽  
Lei Yu ◽  
Wei Yang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Emission ◽  
Device Structure ◽  
Light Emitting ◽  
Polymer Light Emitting Diodes ◽  
Cavity Effects ◽  
Micro Cavity ◽  
Near Infrared Emission ◽  
Inverted Device ◽  
Inverted Device Structure

Micro-cavity effects were applied to acquire near-infrared emission using normal red-emitting materials through an inverted device structure.

Solution-processed near-infrared polymer photodetectors with an inverted device structure

2012 ◽  
Vol 13 (12) ◽  
pp. 2929-2934 ◽  
Author(s):  
Xilan Liu ◽  
Hangxing Wang ◽  
Tingbin Yang ◽  
Wei Zhang ◽  
I-Fan Hsieh ◽  
...  
Keyword(s):  
Near Infrared ◽  
Device Structure ◽  
Solution Processed ◽  
Inverted Device ◽  
Inverted Device Structure

Zinc Oxide Nanowire As an Electron-Extraction Layer for Broadband Polymer Photodetectors with an Inverted Device Structure

2012 ◽  
Vol 116 (25) ◽  
pp. 13650-13653 ◽  
Author(s):  
Tingbin Yang ◽  
Ke Sun ◽  
Xilan Liu ◽  
Wei Wei ◽  
Tianzhi Yu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Device Structure ◽  
Zinc Oxide Nanowire ◽  
Inverted Device ◽  
Electron Extraction ◽  
Inverted Device Structure

scholarly journals A Complete Two-Dimensional Avalanche Photodiode Based on MoTe2−WS2−MoTe2 Heterojunctions With Ultralow Dark Current

2021 ◽  
Vol 8 ◽  
Author(s):  
Tenghui Ouyang ◽  
Ximiao Wang ◽  
Shaojing Liu ◽  
Huanjun Chen ◽  
Shaozhi Deng
Keyword(s):  
Dark Current ◽  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
High Sensitivity ◽  
Avalanche Photodiode ◽  
Infrared Region ◽  
Low Noise ◽  
Two Dimensional ◽  
Device Structure ◽  
Avalanche Gain

Two-dimensional (2D)-material-based photodetectors have recently received great attention due to their potentials in developing ultrathin and highly compact devices. Avalanche photodiodes (APDs) are widely used in a variety of fields such as optical communications and bioimaging due to their fast responses and high sensitivities. However, conventional APDs based on bulk materials are limited by their relatively high dark current. One solution to tackle this issue is by employing nanomaterials and nanostructures as the active layers for APDs. In this study, we proposed and fabricated an atomically-thick APD based on heterojunctions formed by 2D transition metal dichalcogenides (TMDs). A typical device structure was formed by stacking a semiconducting monolayer WS2 onto two metallic few-layer MoTe2 flakes. Due to the Schottky barrier formed between the TMD layers and their atomic thicknesses, the dark current of the APD is greatly reduced down to 93 pA. In addition, the APD can operate through a broad spectral range from visible to near-infrared region, with a responsivity of 6.02 A/W, an external quantum efficiency of 1,406%, and an avalanche gain of 587. We believe that the 2D APD demonstrated here provides a feasible approach for developing all-2D optoelectronic devices with simultaneous high-sensitivity and low noise.

Enhanced power-conversion efficiency in polymer solar cells using an inverted device structure

2012 ◽  
Vol 6 (9) ◽  
pp. 591-595 ◽  
Author(s):  
Zhicai He ◽  
Chengmei Zhong ◽  
Shijian Su ◽  
Miao Xu ◽  
Hongbin Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Polymer Solar Cells ◽  
Power Conversion ◽  
Device Structure ◽  
Inverted Device ◽  
Inverted Device Structure

Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure

Nano Letters ◽  
2012 ◽  
Vol 12 (5) ◽  
pp. 2362-2366 ◽  
Author(s):  
Jeonghun Kwak ◽  
Wan Ki Bae ◽  
Donggu Lee ◽  
Insun Park ◽  
Jaehoon Lim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Device Structure ◽  
Light Emitting ◽  
Full Color ◽  
Colloidal Quantum Dot ◽  
Inverted Device ◽  
Inverted Device Structure
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