Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons

Small ◽  
2014 ◽  
Vol 10 (10) ◽  
pp. 1945-1952 ◽  
Author(s):  
Aigu L. Lin ◽  
Haiyang Peng ◽  
Zhiqi Liu ◽  
Tom Wu ◽  
Chenliang Su ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Graphene Oxide ◽  
Magnetic Graphene ◽  
Magnetoresistive Random Access Memory

scholarly journals Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

2013 ◽  
Vol 34 (5) ◽  
pp. 677-679 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices

2008 ◽  
Vol 47 (5) ◽  
pp. 3456-3460 ◽  
Author(s):  
Norikazu Ohshima ◽  
Ken-ichi Shimura ◽  
Sadahiko Miura ◽  
Tetsuhiro Suzuki ◽  
Ryusuke Nebashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7793-7800 ◽  
Author(s):  
Zhiguang Wang ◽  
Yue Zhang ◽  
Yaojin Wang ◽  
Yanxi Li ◽  
Haosu Luo ◽  
...  
Keyword(s):  
Electric Field ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetization Switching ◽  
Magnetoresistive Random Access Memory
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