scholarly journals Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

Small ◽  
2013 ◽  
Vol 10 (2) ◽  
pp. 247-252 ◽  
Author(s):  
Xuyong Yang ◽  
Evren Mutlugun ◽  
Yongbiao Zhao ◽  
Yuan Gao ◽  
Kheng Swee Leck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tungsten Oxide ◽  
Interfacial Layer ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting

scholarly journals Light-Emitting Diodes: Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes (Small 2/2014)

Small ◽  
2014 ◽  
Vol 10 (2) ◽  
pp. 246-246 ◽  
Author(s):  
Xuyong Yang ◽  
Evren Mutlugun ◽  
Yongbiao Zhao ◽  
Yuan Gao ◽  
Kheng Swee Leck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tungsten Oxide ◽  
Interfacial Layer ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes

Nanoscale ◽  
2015 ◽  
Vol 7 (27) ◽  
pp. 11531-11535 ◽  
Author(s):  
Linyi Bai ◽  
Xuyong Yang ◽  
Chung Yen Ang ◽  
Kim Truc Nguyen ◽  
Tao Ding ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Interfacial Layer ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting

scholarly journals Solution-processed inorganic copper(i) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (42) ◽  
pp. 26322-26327 ◽  
Author(s):  
Tao Ding ◽  
Ning Wang ◽  
Chen Wang ◽  
Xinghua Wu ◽  
Wenbo Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Turn On ◽  
Injection Material

The introduction of CuSCN as the hole injection material significantly improved the turn-on voltage of quantum dot-based LEDs.

Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7281-7290 ◽  
Author(s):  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Copper Nickel ◽  
Hole Transporting

Herein, we report all solution-processed green quantum-dot light-emitting diodes (G-QLEDs) by introducing a perfluorinated ionomer (PFI, Nafion 117) into quantum dots (QDs) to improve hole injection.

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