High-Temperature Operating Non-volatile Memory of Printable Single-Wall Carbon Nanotubes Self-Assembled with a Conjugate Block Copolymer

Small ◽  
2012 ◽  
Vol 9 (6) ◽  
pp. 831-837 ◽  
Author(s):  
Sun Kak Hwang ◽  
Jae Ryung Choi ◽  
Insung Bae ◽  
Ihn Hwang ◽  
Suk Man Cho ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Temperature ◽  
Block Copolymer ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Non Volatile Memory ◽  
Temperature Operating ◽  
Volatile Memory ◽  
Self Assembled

Nonvolatile memories using the electrets of conjugated rod-coil block copolymer and its nanocomposite with single wall carbon nanotubes

2015 ◽  
Vol 3 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Yu-Cheng Chiu ◽  
Chien-Chung Shih ◽  
Wen-Chang Chen
Keyword(s):  
Carbon Nanotubes ◽  
Block Copolymer ◽  
High Performance ◽  
Single Wall Carbon Nanotubes ◽  
Charge Storage ◽  
Memory Devices ◽  
Single Wall Carbon ◽  
Nonvolatile Memories ◽  
Self Assembled

Self-assembled conjugated rod-coil block copolymer and its nanocomposites with SWCNT could be used as the charge storage layer for high-performance OFET memory devices.

Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs

2003 ◽  
Vol 772 ◽  
Author(s):  
Emmanuel Valentin ◽  
Stephane Auvray ◽  
Arianna Filoramo ◽  
Aline Ribayrol ◽  
Marcelo Goffman ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Self Assembly ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Yield ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Assembled Monolayers ◽  
Self Assembled

AbstractWe describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.

High temperature rearrangement of disordered nanoporous carbon at the interface with single wall carbon nanotubes

Carbon ◽  
2009 ◽  
Vol 47 (10) ◽  
pp. 2303-2309 ◽  
Author(s):  
Bo Yi ◽  
Ramakrishnan Rajagopalan ◽  
Christopher L. Burket ◽  
Henry C. Foley ◽  
Xiaoming Liu ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Temperature ◽  
Nanoporous Carbon ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon

Production of fullerenes and single-wall carbon nanotubes by high-temperature pulsed arc discharge

2000 ◽  
Vol 112 (13) ◽  
pp. 6000-6005 ◽  
Author(s):  
Toshiki Sugai ◽  
Hideki Omote ◽  
Shunji Bandow ◽  
Nobuo Tanaka ◽  
Hisanori Shinohara
Keyword(s):  
Carbon Nanotubes ◽  
High Temperature ◽  
Arc Discharge ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Pulsed Arc Discharge ◽  
Pulsed Arc
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