Deep Ultraviolet Laser Radiation Causes Brittle Fracture of C α ‐C β Bonds in Neurotransmitters

2019 ◽  
Vol 4 (18) ◽  
pp. 5235-5239
Author(s):  
Guanhua Yang ◽  
Haiming Wu ◽  
Anthony M. S. Pembere ◽  
Zhixun Luo
Keyword(s):  
Laser Radiation ◽  
Brittle Fracture ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet

Asynchronous cross-correlation for weak ultrafast deep ultraviolet laser pulses

2009 ◽  
Vol 97 (4) ◽  
pp. 759-763 ◽  
Author(s):  
E. Granados ◽  
A. Fuerbach ◽  
D. W. Coutts ◽  
D. J. Spence
Keyword(s):  
Cross Correlation ◽  
Laser Pulses ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet

Photoablation Studies of Polymers, Quartz, and Semiconductors with Vacuum Ultraviolet Laser Radiation

1991 ◽  
Vol 236 ◽  
Author(s):  
Peter R. Herman ◽  
Boyi Chen ◽  
David J. Moore ◽  
Mark Canaga-Retnam
Keyword(s):  
Laser Radiation ◽  
Polymethyl Methacrylate ◽  
Thermal Damage ◽  
Vacuum Ultraviolet ◽  
Medical Industry ◽  
Surface Melting ◽  
Excimer Lasers ◽  
Ultraviolet Laser ◽  
Low Threshold ◽  
Microelectronics Industry

AbstractExcimer lasers sources of 193nm and 157 nm wavelength were used to obtain new photoablation etching rates for several materials of interest to the microelectronics industry. The harder 157nm radiation provided lower ablation rates and smaller threshold fluences for Polyimide and Polymethyl Methacrylate (PMMA) than with 193nm. For normally robust materials like quartz and Teflon (PTFE), the 157nm laser produced clean and smooth ablation sites with low threshold fluences of 620mJ/cm2 and 68mJ/cm2, respectively, features impossible to obtain with conventional excimer lasers at longer wavelengths. The data should help define new micromachining applications of these two materials for the electronic, optical or medical industry. Results are also reported for GaAs and InP based materials which are found to undergo moderate etch rates of 30-80nm/pulse at fluences of ∼3J/cm2, but suffer thermal damage and material segregation due to surface melting.

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