Halide‐Modulated Functionality of Wide Band Gap Zinc Oxide Semiconductor Nanoparticle

2018 ◽  
Vol 3 (23) ◽  
pp. 6382-6393 ◽  
Author(s):  
Tuhin Kumar Maji ◽  
Prasenjit Kar ◽  
Harahari Mandal ◽  
Chinmoy Bhattacharya ◽  
Debjani Karmakar ◽  
...  
2019 ◽  
Vol 104 ◽  
pp. 104646 ◽  
Author(s):  
M. Loeza-Poot ◽  
R. Mis-Fernández ◽  
I. Rimmaudo ◽  
E. Camacho-Espinosa ◽  
J.L. Peña

2014 ◽  
Vol 311 ◽  
pp. 14-26 ◽  
Author(s):  
D.E. Motaung ◽  
I. Kortidis ◽  
D. Papadaki ◽  
S.S. Nkosi ◽  
G.H. Mhlongo ◽  
...  

Vacuum ◽  
2015 ◽  
Vol 120 ◽  
pp. 14-18 ◽  
Author(s):  
F. Khaled ◽  
A. Bouloufa ◽  
K. Djessas ◽  
R. Mahamdi ◽  
I. Bouchama

2005 ◽  
Vol 202 (9) ◽  
pp. R95-R97 ◽  
Author(s):  
R. Martins ◽  
P. Barquinha ◽  
A. Pimentel ◽  
L. Pereira ◽  
E. Fortunato

2018 ◽  
Vol 6 (23) ◽  
pp. 6297-6304 ◽  
Author(s):  
Sebastian Siol ◽  
Yanbing Han ◽  
John Mangum ◽  
Philip Schulz ◽  
Aaron M. Holder ◽  
...  

The wurtzite polymorph of MnTe with a wider band gap and moderate p-type doping is stabilized on an amorphous indium zinc oxide substrate.


2012 ◽  
Vol 18 (S5) ◽  
pp. 87-88 ◽  
Author(s):  
J. Rodrigues ◽  
M. R. N. Soares ◽  
A. J. S. Fernandes ◽  
T. Monteiro ◽  
F. M. Costa

Zinc oxide (ZnO) has been one of the most studied materials in the last decades. Either as bulk material, epilayers or nanostructures, this direct wide band gap semiconductor is known to possess great potential for fundamental science and modern technology applications.


2009 ◽  
Vol 2 (5) ◽  
pp. 529 ◽  
Author(s):  
Lorena Macor ◽  
Fernando Fungo ◽  
Tomas Tempesti ◽  
Edgardo N. Durantini ◽  
Luis Otero ◽  
...  

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