scholarly journals Argon cluster‐ion sputter yield: Molecular dynamics simulations on silicon and equation for estimating total sputter yield

2021 ◽  
Author(s):  
Peter J. Cumpson ◽  
Mieszko Jaskiewicz ◽  
Woo Kyun Kim
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Cluster Ion ◽  
Sputter Yield ◽  
Dynamics Simulations

scholarly journals Molecular dynamics simulations for gas cluster ion beam processes

Vacuum ◽  
2010 ◽  
Vol 84 (8) ◽  
pp. 994-998 ◽  
Author(s):  
Takaaki Aoki ◽  
Toshio Seki ◽  
Jiro Matsuo
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Ion Beam ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Dynamics Simulations

scholarly journals Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 146
Author(s):  
Guoying Liang ◽  
Haowen Zhong ◽  
Yinong Wang ◽  
Shijian Zhang ◽  
Mofei Xu ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Implantation ◽  
Molecular Dynamics Simulations ◽  
Silicon Surface ◽  
Amorphous Structure ◽  
Monocrystalline Silicon ◽  
Vacancy Generation ◽  
Cluster Ion ◽  
And Migration ◽  
Dynamics Simulations

The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si35 cluster ion implantations were investigated by molecular dynamics simulations in the present work. The patterns of vacancy generation and migration, as well as the implantation-induced amorphous structure, were analyzed according to radial distribution function, Wigner–Seitz cell, and identify diamond structure analytical methods. A lot of vacancies rapidly generate and migrate in primary directions and form an amorphous structure in the first two picoseconds. The cluster with higher incident kinetic energy can induce the generation and migration of more vacancies and a deeper amorphous structure. Moreover, boundaries have a loading–unloading effect, where interstitial atoms load into the boundary, which then acts as a source, emitting interstitial atoms to the target and inducing the generation of vacancies again. These results provide more insight into doping silicon via ion implantation.

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