Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films

2020 ◽  
Author(s):  
Sunke Venkataiah ◽  
S.V. Jagadeesh Chandra ◽  
Uppala Chalapathi ◽  
Ch.V.V. Ramana ◽  
Suda Uthanna
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Electrical And Optical Properties

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1233-1236
Author(s):  
Yasuhiro Shigetoshi ◽  
Susumu Tsukimoto ◽  
Hidehisa Takeda ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Pressure Of Oxygen ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

Influence of oxygen partial pressure on electrical and optical properties of Zn0.93Mn0.07O thin films

2011 ◽  
Vol 509 (6) ◽  
pp. 3025-3031 ◽  
Author(s):  
Xue-Yong Li ◽  
Hong-Jian Li ◽  
Ming Yuan ◽  
Zhi-Jun Wang ◽  
Zi-You Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Electrical And Optical Properties

scholarly journals Structural, Electrical, and Optical Properties of Reactively Sputtered Ag-Cu-O Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Effect Of Oxygen

Thin films of silver-copper-oxide were deposited on glass substrates by RF magnetron sputtering of Ag80Cu20 target under various oxygen partial pressures in the range 5×10−3–8×10−2 Pa. The effect of oxygen partial pressure on the crystallographic structure and surface morphology and electrical and optical properties was systematically studied and the results were reported. The oxygen content in the films was correlated with the oxygen partial pressure maintained during the growth of the films. The films which formed at low oxygen partial pressure of 5×10−3 Pa were mixed in phase of Ag2Cu2O3 and Ag while those deposited at 2×10−2 Pa were grown with Ag2Cu2O3 and Ag2Cu2O4 phases. The films which formed at oxygen partial pressure of 2×10−2 Pa showed electrical resistivity of 2.3 Ωcm and optical band gap of 1.47 eV.

scholarly journals Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered AmorphousTiO2Films

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
M. Chandra Sekhar ◽  
P. Kondaiah ◽  
B. Radha Krishna ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Optical Transmittance ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Schottky Effect ◽  
Partial Pressures ◽  
Effect Of Oxygen

Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range9×10−3–9×10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of6×10−2 Pa was nearly stoichiometric. TiO2films formed at all oxygen partial pressures were X-ray amorphous. The optical transmittance gradually increased and the absorption edge shifted towards shorter wavelengths with the increase of oxygen partial pressure. Thin film capacitors with configuration of Al/TiO2/p-Si have been fabricated. The results showed that the leakage current density of films formed decreased with the increase of oxygen partial pressure to6×10−2Pa owing to the decrease in the oxygen defects in the films thereafter it was increased. The current transport mechanism in the TiO2thin films is shown to be Schottky effect and Fowler-Nordheim tunnelling currents.

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