Characteristics of phase transition in boron-implanted Ge2 Sb2 Te5 thin films for phase change memory applications

2014 ◽  
Vol 46 (12-13) ◽  
pp. 1178-1182 ◽  
Author(s):  
D. S. Chao ◽  
P. H. Lee ◽  
J. H. Liang ◽  
P. C. Chang ◽  
T. S. Chin
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Ti x Sb 2 Te Thin Films for Phase Change Memory Applications

2014 ◽  
Vol 31 (7) ◽  
pp. 078503
Author(s):  
Shi-Yu Tang ◽  
Run Li ◽  
Xin Ou ◽  
Han-Ni Xu ◽  
Yi-Dong Xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Preparation and characterization of GeTe4 thin films as a candidate for phase change memory applications

2011 ◽  
Vol 109 (6) ◽  
pp. 066104 ◽  
Author(s):  
Hao Jiang ◽  
Kang Guo ◽  
Hanni Xu ◽  
Yidong Xia ◽  
Kun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Investigation of multilayer SnSb4/ZnSb thin films for phase change memory applications

2017 ◽  
Vol 10 (5) ◽  
pp. 055504 ◽  
Author(s):  
Zifang He ◽  
Shiyu Chen ◽  
Weihua Wu ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films

2007 ◽  
Vol 1056 ◽  
Author(s):  
Feiming Bai ◽  
Surendra Gupta ◽  
Archana Devasia ◽  
Santosh Kurinec ◽  
Morgan Davis ◽  
...  
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Phase Change ◽  
Phase Change Memory ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Area Detector ◽  
Memory Applications ◽  
Change Memory

ABSTRACTPhase transitions in stacked GeTe/SnTe and Ge2Se3/SnTe thin layers for potential phase-change memory applications have been investigated by X-ray diffraction using a two-dimensional area detector system. The as-deposited underlying GeTe or Ge2Se3 layer is amorphous, whereas the top SnTe layer is crystalline. In the GeTe/SnTe stack, the crystallization of GeTe phase occurs near 170°C, and upon further heating, the GeTe phase disappears, followed by the formation of rocksalt-structured GexSn1−xTe solid solution. In the Ge2Se3/SnTe stack, the phase transition starts with the separation of a SnSe phase due to the migration of Sn ions into the Ge2Se3 layer. SnSe is believed to facilitate the crystallization of Ge2Se3-SnTe solid solution at ∼360°C, which is much lower than the crystallization temperature of Ge2Se3, therefore consuming less power during the phase transition.

Characterizations of AgInSbTe and Its Nanocomposite Thin Films for Phase-Change Memory Applications

2010 ◽  
Vol 157 (12) ◽  
pp. P113 ◽  
Author(s):  
Yu-Jen Huang ◽  
Tzu-Chin Chung ◽  
Chiung-Hsin Wang ◽  
Tsung-Eong Hsieh
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Nanocomposite Thin Films ◽  
Memory Applications ◽  
Change Memory

SnSb4/SiO2 multilayered thin films for phase change memory applications

2016 ◽  
Vol 432 ◽  
pp. 505-509 ◽  
Author(s):  
Yi Lu ◽  
Yifeng Hu ◽  
Li Yuan ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Multilayered Thin Films ◽  
Change Memory

Ultra-high speed and low-power superlattice-like Sn 18 Sb 82 –SnSe 2 thin films for phase change memory applications

2016 ◽  
Vol 163 ◽  
pp. 20-23 ◽  
Author(s):  
Ruirui Liu ◽  
Zifang He ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Ultra High Speed ◽  
Memory Applications ◽  
Change Memory

scholarly journals Samarium doped Sn15Sb85: a promising material for phase change memory applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 56000-56005 ◽  
Author(s):  
Hua Zou ◽  
Liangjun Zhai ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Haipeng You ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
Phase Change Memory ◽  
Promising Material ◽  
Memory Applications ◽  
Thermal Stability Of ◽  
Change Memory

Thermal stability of phase change films is key for phase change memory applications. Sm doped Sn15Sb85 thin films were prepared by magnetron sputtering. Compared with none doped films, the thermal stability of the film was significantly improved.

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