The effects of a combined thermal treatment of substrate heating and post-annealing on the microstructure of InGaZnO films and the device performance of their thin film transistors

2012 ◽  
Vol 44 (11-12) ◽  
pp. 1431-1435 ◽  
Author(s):  
Mi Ran Moon ◽  
Sekwon Na ◽  
Haseok Jeon ◽  
Tae Hun Lee ◽  
Donggeun Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Device Performance ◽  
Substrate Heating ◽  
Post Annealing

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Post Annealing

Influence of thermal treatment on the performance of copper phthalocyanine thin-film transistors

2010 ◽  
Vol 10 (1) ◽  
pp. 129-132 ◽  
Author(s):  
Xueyan Tian ◽  
Zheng Xu ◽  
Fujun Zhang ◽  
Suling Zhao ◽  
Guangcai Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Copper Phthalocyanine

P‐16: Homojunction Indium–Gallium–Zinc Oxide Thin‐Film Transistors by Selective Simultaneous UV and Thermal Treatment

2020 ◽  
Vol 51 (1) ◽  
pp. 1369-1371
Author(s):  
Hyung Tae Kim ◽  
Hyukjoon Yoo ◽  
Jeong Woo Park ◽  
Won-Gi Kim ◽  
Dong Hyun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
P 16 ◽  
Indium Gallium

Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

2017 ◽  
Vol 5 (2) ◽  
pp. 339-349 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Won Jun Kang ◽  
Bora Kim ◽  
Dea Ho Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Chemical Durability ◽  
Oxide Thin Film ◽  
Large Area ◽  
Solution Processed ◽  
Circuit Integration

The chemical durability of solution-processed oxide films was engineered via Sn-incorporation and thermal-treatment, which was applied for large-area TFT circuit integration.

Low Temperature Post-Annealing of ZnO Thin-Film Transistors with High-k Gate Dielectrics

2019 ◽  
Vol 16 (9) ◽  
pp. 315-322 ◽  
Author(s):  
Henry J. H. Chen ◽  
Barry B. Yeh ◽  
Wei-Yang Chou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
Post Annealing ◽  
High K

Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

2012 ◽  
Vol 51 (1R) ◽  
pp. 015601 ◽  
Author(s):  
Byung Du Ahn ◽  
Hyun Soo Shin ◽  
Dong Lim Kim ◽  
Seung Min Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Degradation ◽  
Device Performance

Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors

Vacuum ◽  
2011 ◽  
Vol 85 (9) ◽  
pp. 904-907 ◽  
Author(s):  
R. Navamathavan ◽  
R. Nirmala ◽  
Cheul Ro Lee
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Device Performance

Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

2011 ◽  
Vol 51 (1) ◽  
pp. 015601 ◽  
Author(s):  
Byung Du Ahn ◽  
Hyun Soo Shin ◽  
Dong Lim Kim ◽  
Seung Min Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Degradation ◽  
Device Performance
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