An in situ temperature-programmed XPS study of the surface chemical reactions of thiophene with Ag/titania

2010 ◽  
Vol 42 (9) ◽  
pp. 1476-1482 ◽  
Author(s):  
Alexander Samokhvalov ◽  
Eduardus C. Duin ◽  
Sachin Nair ◽  
Bruce J. Tatarchuk
Keyword(s):  
Chemical Reactions ◽  
Surface Chemical ◽  
Surface Chemical Reactions ◽  
Temperature Programmed ◽  
Xps Study

The Role of Barium In the Heteroepitaxial Growth of Insulator and Semiconductors On Silicon

1993 ◽  
Vol 334 ◽  
Author(s):  
T. K. Chu ◽  
F. Santiago ◽  
M. Stumborg ◽  
C. A. Huber
Keyword(s):  
Epitaxial Growth ◽  
Chemical Reactions ◽  
Surface Chemical ◽  
Metallic Elements ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
In Situ Xps ◽  
Surface Chemical Reactions

AbstractThe epitaxial growth of an insulator, BaF2, and semiconductors of the II-VI and the IV-VI families on Si substrates were carried out. In-situ XPS analyses during the growth of the first monolayers were used to study the surface chemical reactions involved. The results point to a common ingredient in these growths: that the Ba atoms are involved in forming interfacial compounds that would facilitate the heteroepitaxies. In the case of BaF2/Si, a BaSi2 compound has been identified previously. In the case of PbTe and CdTe, the heteroepitaxies on Si are made possible with the BaSi2 buffer. As a result, the impinging semiconductor molecules are broken up, and the metallic elements are ejected from the BaSi2 surface. A new surface chemical, BaTe, is thereby formed. These surface Ba compounds appear to be the dominant factors as the crystal orientations of the BaF2, CdTe, and PbTe layers are independent of those of the Si substrates.

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