scholarly journals Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films

2008 ◽  
Vol 40 (3-4) ◽  
pp. 714-717 ◽  
Author(s):  
Maurizio Dapor
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Backscattering Coefficient ◽  
Electron Backscattering

scholarly journals Determination of electron backscattering coefficient of beryllium by a high-precision Monte Carlo simulation

2021 ◽  
Vol 26 ◽  
pp. 100862
Author(s):  
Abrar Hussain ◽  
Lihao Yang ◽  
Shifeng Mao ◽  
Bo Da ◽  
Károly Tőkési ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Precision ◽  
Backscattering Coefficient ◽  
Electron Backscattering

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Transition from island to layer growth of thin films: A Monte Carlo simulation

1977 ◽  
Vol 40 (1) ◽  
pp. 47-58 ◽  
Author(s):  
D. Kashchiev ◽  
J.P. van der Eerden ◽  
C. van Leeuwen
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Layer Growth
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