Ion beam analysis of dependence of the D–H replacement speed on trivalent impurity concentration in D-implanted oxide ceramics exposed to H2O vapor at room temperature

2006 ◽  
Vol 38 (12-13) ◽  
pp. 1573-1577 ◽  
Author(s):  
Kenji Morita ◽  
Bun Tsuchiya ◽  
Shinji Nagata ◽  
Koji Katahira
Keyword(s):  
Impurity Concentration ◽  
Room Temperature ◽  
Ion Beam ◽  
Oxide Ceramics ◽  
Ion Beam Analysis ◽  
Beam Analysis

Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature

1983 ◽  
Vol 124 (1) ◽  
pp. A1
Author(s):  
R.M. Tromp ◽  
E.J. Van Loenen ◽  
M. Iwami ◽  
R.G. Smeenk ◽  
F.W. Saris ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis

Discovery of Long Range Order in Thin (2-20 NM) SiO2 Films by Ion Beam Analysis

1998 ◽  
Vol 510 ◽  
Author(s):  
N. Herbots ◽  
V. Atluri ◽  
Q. B. Hurst ◽  
J. M. Shaw ◽  
S. Banerjee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ambient Air ◽  
Chemical Cleaning ◽  
Ion Beam Analysis ◽  
Ion Channeling ◽  
Oxidation Rates ◽  
Beam Analysis ◽  
Wet Chemical ◽  
20 Nm

AbstractSiO2 films, 2-20 nm thick, were grown on passivated, ordered Si(100) to correlate electrical properties and oxidation rates with processing for ultra-thin gate oxides. Ordered Si(l 00) (1 × 1) stable in ambient air was obtained at room temperature by wet chemical cleaning. The thickest oxides were grown by Rapid Thermal Oxidation at 850°C, the thinnest at room temperature. O was detected by Ion Beam Analysis (IBA) using a combination of ion channeling with the 3.05 MeV 16O(α,α)16O nuclear resonance. It then becomes possible to measure order in thin SiO2 by comparing the total amount of O from rotating random spectra to disordered O detected by ion channeling, and detect the alignment of O with the atoms in Si(100)

Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature

1983 ◽  
Vol 124 (1) ◽  
pp. 1-25 ◽  
Author(s):  
R.M. Tromp ◽  
E.J. van Loenen ◽  
M. Iwami ◽  
R.G. Smeenk ◽  
F.W. Saris ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis

scholarly journals Evaluation of the sub-surface morphology and composition of gunshot residue using focussed ion beam analysis

2019 ◽  
Vol 297 ◽  
pp. 100-110 ◽  
Author(s):  
Nick Lucas ◽  
Kelsey E. Seyfang ◽  
Andrew Plummer ◽  
Michael Cook ◽  
K. Paul Kirkbride ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Ion Beam ◽  
Gunshot Residue ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Focussed Ion Beam

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis
Sign in / Sign up

Export Citation Format

Share Document