Novel compositional accommodation mechanism in SrNbO3 epitaxial thin films revealed by analytical electron microscopy

2003 ◽  
Vol 35 (1) ◽  
pp. 29-35 ◽  
Author(s):  
S. Takeno ◽  
R. Ohara ◽  
K. Sano ◽  
T. Kawakubo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Analytical Electron Microscopy ◽  
Epitaxial Thin Films ◽  
Analytical Electron ◽  
Accommodation Mechanism

Analytical Electron Microscopy Of Multilayered Thin Films Using Microcleavage

1986 ◽  
Vol 25 (8) ◽  
Author(s):  
Yves Lepetre ◽  
Ivan K. Schuller ◽  
Georges Rasigni ◽  
Rene Rivoira ◽  
Roger Philip ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Analytical Electron Microscopy ◽  
Analytical Electron ◽  
Multilayered Thin Films

scholarly journals Analytical Electron microscopy Investigation of Au/TiO2 Thin Films Deposited on the Glass Substrate

2013 ◽  
Vol 19 (S2) ◽  
pp. 1498-1499
Author(s):  
M. Kawasaki ◽  
M.-J. Chen ◽  
J.-R. Yang ◽  
W.-A. Chiou ◽  
M. Shiojiri
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Glass Substrate ◽  
Analytical Electron Microscopy ◽  
Tio2 Thin Films ◽  
Microscopy Investigation ◽  
Electron Microscopy Investigation ◽  
Analytical Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Analytical Electron Microscopy of InN thin films Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S2) ◽  
pp. 254-255 ◽  
Author(s):  
G Drazic ◽  
E Sarantopoulou ◽  
Z Kollia ◽  
A-C Cefalas ◽  
S Kobe
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
New Mexico ◽  
Pulsed Laser Deposition ◽  
Analytical Electron Microscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Analytical Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Direct observation of the defect structure and structural interfaces in laser-deposited Y-Ba-Cu-O thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 74-75
Author(s):  
R. Ramesh ◽  
T.S. Ravi ◽  
D.M. Hwang ◽  
C.C. Chang ◽  
X.X. Xi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Critical Currents ◽  
Structural Defects ◽  
Oxide Superconductors ◽  
Epitaxial Thin Films ◽  
Superconducting Transition ◽  
Point To Point

One of the earliest applications of the newly discovered high temperature oxide superconductors is in the area of microelectronics, involving the fabrication of epitaxial thin films and heterostructures on suitable substrates. After examining several thin films deposition techniques, the pulsed excimer laser deposition technique has been found to yield films with excellent superconducting properties including a Tc of 90-91K, a superconducting transition width of less than 0.5°, transport critical currents of 5×106A/cm2 or higher and good microwave properties. The higher critical currents in the thin films, compared to bulk materials, have been attributed to the presence of a wide variety of structural defects that act as flux pinning centers. Hence, we have undertaken a systematic study of the atomic nature of the structural defects. In addition to high resolution electron microscopy(HREM), microdiffraction and analytical electron microscopy are being used to study the microstructure. Specifically, HREM is being carried out using the 1.6A point-to-point resolution and ±45° goniometric tilt capability of the Berkeley Atomic Resolution Microscope(ARM).

Sources of background X-radiation in analytical electron microscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 504-505 ◽  
Author(s):  
T.J. Headley ◽  
J.J. Hren
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Analytical Electron Microscopy ◽  
Objective Lens ◽  
X Rays ◽  
Relative Importance ◽  
Major Barrier ◽  
Specimen Holder ◽  
Analytical Electron ◽  
Internal Sources

It is well known that a major barrier to quantitative energy dispersive (EDS) measurements of thin films is the background X-radiation generated from stray electrons and X-rays from a variety of internal sources. A number of sources have been reported in a variety of microscopes and there is disagreement over their relative importance. Clearly the sources from each type of microscope must be systematically investigated and suppressed. We report here one such study of a JEM 100C/SEG microscope. Although our data are specific to this instrument, analogous results should be obtained from other analytical transmission microscopes. The major sources of spectral background in the JEM 100C were found to be: 1) the fixed condenser (Cl) aperture, 2) the variable condenser (C2) aperture, and 3) the specimen holder. Other potential background sources such as the objective lens pole pieces and the anticontamination device did not contribute a measurable signal. Still others, such as the objective aperture, could be eliminated simply by prudent operation (e.g. removal during EDS counts).

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