Yield enhancement effect of low-energy O2+ ion bombardment in Ga focused ion beam SIMS

2001 ◽  
Vol 31 (9) ◽  
pp. 901-904 ◽  
Author(s):  
Jun Kikuma ◽  
Hideaki Imai
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Yield Enhancement ◽  
Enhancement Effect

Yield Enhancement Study: Process Variation and Design Margins Leading to Timing Issues in the RAM

2000 ◽  
Author(s):  
Srikanth Perungulam ◽  
Scott Wills ◽  
Greg Mekras
Keyword(s):  
Cross Sections ◽  
Digital Signal Processor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Digital Signal ◽  
Yield Enhancement ◽  
Final Conclusion ◽  
Stage Separation ◽  
Study Process

Abstract This paper illustrates a yield enhancement effort on a Digital Signal Processor (DSP) where random columns in the Static Random Access Memory (SRAM) were found to be failing. In this SRAM circuit, sense amps are designed with a two-stage separation and latch sequence. In the failing devices the bit line and bit_bar line were not separated far enough in voltage before latching got triggered. The design team determined that the sense amp was being turned on too quickly. The final conclusion was that a marginal sense amp design, combined with process deviations, would result in this type of failure. The possible process issues were narrowed to variations of via resistances on the bit and bit_bar lines. Scanning Electron Microscope (SEM) inspection of the the Focused Ion Beam (FIB) cross sections followed by Transmission Electron Microscopy (TEM) showed the presence of contaminants at the bottom of the vias causing resistance variations.

Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L716-L718 ◽  
Author(s):  
Tomokazu Nishiyama ◽  
Eum-Mi Kim ◽  
Kazutoshi Numata ◽  
Kangsa Pak
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Direct Growth

Low energy focused ion beam milling of silicon and germanium nanostructures

2011 ◽  
Vol 22 (10) ◽  
pp. 105304 ◽  
Author(s):  
Miroslav Kolíbal ◽  
Tomáš Matlocha ◽  
Tomáš Vystavěl ◽  
Tomáš Šikola
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon And Germanium ◽  
Focused Ion Beam Milling

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

Chemically-Enhanced GaAs Maskless Etching Using a Novel Focused Ion Beam Etching System with a Chlorine Molecular and Radical Beam

1986 ◽  
Vol 75 ◽  
Author(s):  
N. Takado ◽  
K. Asakawa ◽  
H. Arimoto ◽  
T. Morita ◽  
S. Sugata ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Maximum Yield ◽  
Laser Cavity ◽  
High Rate ◽  
Enhancement Effect ◽  
Scanning Time ◽  
Chemical Enhancement ◽  
Deep Groove

AbstractChlorine-enhanced GaAs maskless etching using a novel focused-ion-beametching (FIBE) system has been examined for establishing high-rate and smooth FIBE. The system is composed of an air-locked ultrahigh-vacuum chamber, a 30 KeV Ga+ FIB column and two kinds of chlorine-irradiation nozzles. A fine nozzle enabled us to irradiate a high-density Cl2 flux on a desired, small area of the sample while retaining a sufficiently low surrounding-gas pressure for stable Ga+ FIB emission. Highly chemically-enhanced sputtering yields (up to 50 GaAs molecules per incident ion) were obtained. At the maximum yield, line-scanned deep-groove (6.5 um) etching with a smooth surface, capable of fabricating a laser-cavity optical mirror, was demonstrated. The chemical-enhancement effect showed high FIB-scanning-time dependence. This effect was also observed by irradiating with a plasma-dissociated Cl radicals using a novel radical beam gun. An analytical model, based on the Ga+-ion bombardment on the chlorine-adsorbed substrate surface, suggested that the maximum chemical enhancement is obtained when the Ga+-FIB scanning time is adjusted to the chlorine-coverage time, given by the Cl2-molecule or Cl-radical flux density.

Direct Imaging of Device Characteristics In a Focused ion Beam System

1998 ◽  
Vol 4 (S2) ◽  
pp. 652-653 ◽  
Author(s):  
A. N. Campbell ◽  
J. M. Soden
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Material Removal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Yield Enhancement ◽  
The Past ◽  
Design Changes ◽  
Design Debugging

A great deal can be learned about integrated circuits (ICs) and microelectronic structures simply by imaging them in a focused ion beam (FIB) system. FIB systems have evolved during the past decade from something of a curiosity to absolutely essential tools for microelectronics design verification and failure analysis. FIB system capabilities include localized material removal, localized deposition of conductors and insulators, and imaging. A major commercial driver for FIB systems is their usefulness in the design debugging cycle by (1) rewiring ICs quickly to test design changes and (2) making connection to deep conductors to facilitate electrical probing of complex ICs. FIB milling is also used for making precision cross sections and for TEM sample preparation of microelectronic structures for failure analysis and yield enhancement applications.

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