53.1: Full‐Color Micro‐LED Display based on MOCVD Growth of Two Types of InGaN/GaN MQWs
Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1228-1231
Keyword(s):
2020 ◽
Keyword(s):
1998 ◽
Keyword(s):