P‐100: Improvement of Film Profile and Device Performance with Different HIL Inks for High‐Resolution Display in Solution‐Processed OLED

2021 ◽  
Vol 52 (1) ◽  
pp. 1455-1458
Author(s):  
Jun Ho Youn ◽  
JeongKyun Shin ◽  
SangBin Lee ◽  
Heumell Baek ◽  
HyoDae Bae
Keyword(s):  
High Resolution ◽  
Device Performance ◽  
Solution Processed ◽  
Film Profile

High-Performance Solution Processed Red Hyperfluorescent OLEDs Based on Cibalackrot

2022 ◽  
Author(s):  
Nicholle R. Wallwork ◽  
Masashi Mamada ◽  
Atul Shukla ◽  
Sarah K. M. McGregor ◽  
Chihaya Adachi ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Device Performance ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Light

Hyperfluorescent organic light-emitting diodes (OLEDs) has allowed remarkable device performances to be achieved using fluorescent emitters. Superior device performance has been realised using thermally evaporated emissive layers. However, for future...

Investigation of the enhanced performance and lifetime of organic solar cells using solution-processed carbon dots as the electron transport layers

2015 ◽  
Vol 3 (48) ◽  
pp. 12403-12409 ◽  
Author(s):  
Haijun Zhang ◽  
Qian Zhang ◽  
Miaomiao Li ◽  
Bin Kan ◽  
Wang Ni ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Organic Solar Cells ◽  
Carbon Dots ◽  
Device Performance ◽  
Solution Processed

Solution-processed carbon dots (CDs) as the electron transport layers (ETLs) significantly enhanced device performance (Jscand FF) and lifetime.

Surface Energy Engineered, High-Resolution Micropatterning of Solution-Processed Reduced Graphene Oxide Thin Films

2012 ◽  
Vol 25 (6) ◽  
pp. 894-898 ◽  
Author(s):  
Nam Hee Kim ◽  
Beom Jun Kim ◽  
Yeongun Ko ◽  
Jeong Ho Cho ◽  
Suk Tai Chang
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
High Resolution ◽  
Surface Energy ◽  
Reduced Graphene Oxide ◽  
Oxide Thin Films ◽  
Solution Processed ◽  
Reduced Graphene

scholarly journals Novel Bending Sensor Based on a Solution-Processed Cu2O Film with High Resolution Covering a Wide Curvature Range

ACS Omega ◽  
2021 ◽  
Author(s):  
Ryosuke Nitta ◽  
Ryo Taguchi ◽  
Yuta Kubota ◽  
Tetsuo Kishi ◽  
Atsushi Shishido ◽  
...  
Keyword(s):  
High Resolution ◽  
Solution Processed ◽  
Cu2o Film ◽  
Bending Sensor

scholarly journals Solution Processed Low Voltage Metal-Oxide transistor by using TiO2 /Li-Al2O3 stacked Gate Dielectric

2021 ◽  
Author(s):  
Nila Pal ◽  
Utkarsh Pandey ◽  
Sajal Biring ◽  
Bhola Nath Pal
Keyword(s):  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Single Layer ◽  
Device Performance ◽  
Operating Voltage ◽  
Semiconductor Interface ◽  
Solution Processed ◽  
Bilayer Dielectric ◽  
Effective Carrier

Abstract A solution processed top-contact bottom gated SnO2 thin-film transistor (TFT) has been fabricated by using a TiO2/ Li-Al2O3 bilayer stacked gate dielectric that show operating voltage of this TFT within 2.0 V. It is observed that the bilayer dielectric has much higher areal capacitance with lower leakage current density that significantly improve the overall device performance of TFT. The TFT with bilayer gate dielectric shows an effective carrier mobility (µsat) of 9.2 cm2V− 1s− 1 with an on/off ratio of 7.1x103 which are significantly higher with respect to the TFT with a single layer Li-Al2O3 gate dielectric. The origin of this improvement is due to the Schottky junction between the highly doped silicon (p++-Si) and TiO2 of bilayer stacked dielectric that induced electrons to the channel which reduces the dielectric/semiconductor interface trap state. This investigation opens a new path to develop TFT device performance using a suitable bilayer stack of gate-dielectric.

scholarly journals Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Binghao Wang ◽  
Wei Huang ◽  
Sunghoon Lee ◽  
Lizhen Huang ◽  
Zhi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thin Film Transistors ◽  
Semiconducting Polymers ◽  
Environmentally Benign ◽  
Device Performance ◽  
Solvent Exposure ◽  
Semiconducting Polymer ◽  
Polymer Semiconductors ◽  
Benign Solvents

AbstractSolution processability of polymer semiconductors becomes an unfavorable factor during the fabrication of pixelated films since the underlying layer is vulnerable to subsequent solvent exposure. A foundry-compatible patterning process must meet requirements including high-throughput and high-resolution patternability, broad generality, ambient processability, environmentally benign solvents, and, minimal device performance degradation. However, known methodologies can only meet very few of these requirements. Here, a facile photolithographic approach is demonstrated for foundry-compatible high-resolution patterning of known p- and n-type semiconducting polymers. This process involves crosslinking a vertically phase-separated blend of the semiconducting polymer and a UV photocurable additive, and enables ambient processable photopatterning at resolutions as high as 0.5 μm in only three steps with environmentally benign solvents. The patterned semiconducting films can be integrated into thin-film transistors having excellent transport characteristics, low off-currents, and high thermal (up to 175 °C) and chemical (24 h immersion in chloroform) stability. Moreover, these patterned organic structures can also be integrated on 1.5 μm-thick parylene substrates to yield highly flexible (1 mm radius) and mechanically robust (5,000 bending cycles) thin-film transistors.

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