P‐11: Self‐Heating Induced Degradation in a Metal‐Oxide Thin‐Film Transistor on a Flexible Substrate and Its Mitigation

2021 ◽  
Vol 52 (1) ◽  
pp. 1092-1095
Author(s):  
Zhihe Xia ◽  
Runxiao Shi ◽  
Lei Lu ◽  
Hoi-Sing Kwok ◽  
Man Wong
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Flexible Substrate ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Self Heating ◽  
Metal Oxide Thin Film

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

A Bottom-Gate Metal–Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions

2018 ◽  
Vol 65 (7) ◽  
pp. 2820-2826 ◽  
Author(s):  
Zhihe Xia ◽  
Lei Lu ◽  
Jiapeng Li ◽  
Hoi-Sing Kwok ◽  
Man Wong
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Bottom Gate

P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

2016 ◽  
Vol 47 (1) ◽  
pp. 1151-1154 ◽  
Author(s):  
Jong-Heon Yang ◽  
Ji Hun Choi ◽  
Jae-Eun Pi ◽  
Hee-Ok Kim ◽  
Eun-Suk Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Active Layers ◽  
Metal Oxide Thin Film

46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor

2016 ◽  
Vol 47 (1) ◽  
pp. 621-624 ◽  
Author(s):  
Taiyu Jin ◽  
Jeongjae Ryu ◽  
HanSaem Kang ◽  
Kwangsoo No ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Level Pressure ◽  
Metal Oxide Thin Film ◽  
Multi Level

Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO2 Gate Dielectric

2019 ◽  
Vol 16 (1) ◽  
pp. 22-34 ◽  
Author(s):  
Anand Sharma ◽  
Nitesh K. Chourasia ◽  
Vishwas Acharya ◽  
Nila Pal ◽  
Sajal Biring ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film
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